Allicdata Part #: | DTC115EUAT106TR-ND |
Manufacturer Part#: |
DTC115EUAT106 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS PREBIAS NPN 200MW UMT3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | DTC115EUAT106 Datasheet/PDF |
Quantity: | 9000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 20mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 100 kOhms |
Resistor - Emitter Base (R2): | 100 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 82 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 250MHz |
Power - Max: | 200mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | UMT3 |
Base Part Number: | DTC115 |
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The DTC115EUAT106 is a single-stage, pre-biased general-purpose bipolar junction transistor (BJT) featuring high speed switching and amplifier switching performance. It is designed for use in various applications, including amplifiers and switching circuits, and can be used in both high-power and low-noise applications. The pre-bias allows the use of the transistor at reduced build, saving energy and space costs.
The transistor is made up of three layers: an emitter, a collector and a base. The base is an inexpensive and efficient way to control the current flowing between the emitter and the collector. When the base is forward biased, it injects electrons into the emitter, creating an electric field that pushes the electrons to the collector. The current is then amplified at the collector.
The DTC115EUAT106 can operate in either a common-emitter (CE) or common-collector (CC) circuit configuration, depending on how it is connected to the power supply. In a CE configuration, the emitter is grounded and the base is supplied with a positive voltage. As the voltage on the base increases, the current flowing through the emitter-collector junction increases.
In a CC configuration, the collector is grounded and the base is supplied with a positive voltage. As the voltage on the base increases, the current flowing through the emitter-collector junction decreases. This configuration is often used in amplifier circuits, allowing the output voltage to be adjusted by varying the voltage at the base.
The DTC115EUAT106 is designed to provide excellent switching performance for digital applications. It has high speed switching, which increases its efficiency in circuits where high frequency signals are used. It has a very low total gate charge, meaning it can be switched on and off rapidly.
The transistor is also designed to provide excellent amplifier switching performance. It has a fast switching response time and very high gain, allowing it to be used in high-power applications. As a result, the DTC115EUAT106 is a suitable choice for circuits where large amounts of power need to be switched rapidly and accurately.
The DTC115EUAT106 is a versatile device that can be used in many different types of applications. It is suitable for use in switching circuits, amplifier circuits and in many high-power applications. In addition, it is pre-biased, allowing it to be used at reduced build costs and saving energy.
The specific data is subject to PDF, and the above content is for reference
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