| Allicdata Part #: | DTC144ESATPTR-ND |
| Manufacturer Part#: |
DTC144ESATP |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ROHM Semiconductor |
| Short Description: | TRANS PREBIAS NPN 300MW SPT |
| More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
| DataSheet: | DTC144ESATP Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 68 @ 5mA, 5V |
| Base Part Number: | DTC144 |
| Supplier Device Package: | SPT |
| Package / Case: | SC-72 Formed Leads |
| Mounting Type: | Through Hole |
| Power - Max: | 300mW |
| Frequency - Transition: | 250MHz |
| Current - Collector Cutoff (Max): | 500nA |
| Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
| Series: | -- |
| Resistor - Emitter Base (R2): | 47 kOhms |
| Resistor - Base (R1): | 47 kOhms |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Current - Collector (Ic) (Max): | 30mA |
| Transistor Type: | NPN - Pre-Biased |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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TheDTC144ESATP belongs to Transistors - Bipolar (BJT) - Single, Pre-Biased family, which is a semiconductor device that controls current flow by setting up an electric field in a base region between the emitter and collector. It is typically used as an amplifier or a switch in amplifiers and switches or other digital components.
The DTC144ESATP is a discreet PNP Si-based transistor, providing current gain and switching capabilities up to 200mAand twogain buckets with maximum collector to emitter voltage (Vce) of 80V@ 200mA (NPN) and 80V@ 200mA (PNP). It is a high speed device with drain to source voltageVdscapable up to 25V and maximumcollector current of 200mA. The device also comes with an additional reverse saturation current(Irs) rating of 50uA, making it ideal for use as an amplifier or switch in power management and signal processing systems.
The DTC144ESATP is specifically designed to work in the supply voltage range of 3.2~6.0V and employs a two-layer embedded chip with both JFET and MOST inputs. It operates at a frequency range of80 to 300kHzand has a maximum output power of up to 500mW. This enables it to easily drive a load up to 200mA from a single supply without any additional amplifier or buffer stage. Its low gate voltage rating also ensures that the device can be operated in noisy environments without overloading the gates. Furthermore, its low supply voltage requirement allows it to be used in low voltage applications.
The DTC144ESATP’s primary application field is the power demand and signal processing systems, due to its high current gain and switching capabilities. It can be used as an amplifier or switch in amplifiers and switches, or as a digital output buffer in logic or switching applications. Its good noise immunity makes it ideal for use in power electronics and signal processing systems. As mentioned previously, its low gate voltage rating and low supply voltage requirement make it very attractive in low voltage applications.
The working principle of the DTC144ESATP is simple and is based on the basics of a bipolar junction transistor, with the current gain being set by adjusting the biasing voltage applied to the base region. The current flow through the device is controlled by the amount of bias voltage that is applied. As such, the DTC144ESATP is able to provide an output signal with accurate linearity, as well as controlled switching speed, making it suitable for use in both high and low power applications.
In conclusion, the DTC144ESATP is a great device to use in power demand and signal processing systems due to its high current gain, switching capabilities, and noise immunity. Its low gate voltage and low supply voltage requirements make it a good choice for low voltage applications. Furthermore, its simple working principle makes it easy to use, making it an ideal choice for power electronics and signal processing applications.
The specific data is subject to PDF, and the above content is for reference
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DTC144ESATP Datasheet/PDF