DZ23C33-G3-18

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DZ23C33-G3-18 are a type of diode array zener, specifically low-power zener array devices. The diode array family offers several benefits for applications in robust, low-noise analog circuit designs where low power consumption is paramount.

DZ23C33-G3-18 are designed to provide an array of protection against overvoltage and to buffer analog signals from outside interferences. The diode array family offers an ideal choice for integrated circuit designs, requiring enhanced circuit performance as well as low power consumption.

DZ23C33-G3-18 are available in SOT23 packages which allows designers to take advantage of their small size and low power consumption. They have a low on-resistance of 0.5mΩ, and a breakdown voltage rating of 13V. That ensures they are capable of providing excellent low voltage protection and smooth regulation.

The diode array features wide operating temperature range (-40°C to 85°C) ensuring robust performance even in extreme scenarios. In addition, the diode array offers low leakage current rating in addition to low ESD susceptibility making it safe for use in circuits where ESD protection is essential for data integrity.

On application level, DZ23C33-G3-18 are ideal for voltage-sensitive analog and digital circuits in a broad range of applications, such as control and communication systems, automotive, consumer and industrial equipment. One can also find them in light bulb controllers and computer mainboards.

Working Principle

DZ23C33-G3-18 operate on the principle ofPN-junction breakdown, a phenomenon of a forward biased semiconductor diode which causes a sharp increase in current when the voltage across the PN junction reaches a certain value known as the breakdown voltage. In this diode array, each individual diode junction can be maintained at a different, chosen breakdown voltage, due to the intentional inclusion of an extra impurity region to generate an internal electric field.

The device is capable of handling an overload current up to 10A. During overload conditions, the device is able to reduce the thermal shock and improve the current handling capabilities by making use of two low-leakage junctions known as “soft” and “hard” junctions – where the “soft” junction gets maximum stress during normal operation and the “hard” junction acts as a buffer for higher current handling. This results in the device providing superior heat dissipation during overloads.

Conclusion

DZ23C33-G3-18 are low-power zener arrays offering a wide range of benefits for applications requiring robust, low-noise analog circuit designs. They offer an array of protection against overvoltage, a small size and low power consumption, wide operating temperature range and low leakage current rating. These features make them ideal for voltage-sensitive analog and digital circuits in a broad range of applications, such as control and communication systems, automotive, consumer and industrial equipment. They operate on the principle ofPN-junction breakdown, and are even capable of handling an overload current up to 10A.

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