DZ2S10000L Allicdata Electronics

DZ2S10000L Discrete Semiconductor Products

Allicdata Part #:

DZ2S10000LTR-ND

Manufacturer Part#:

DZ2S10000L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: DIODE ZENER 10V 150MW SSMINI2
More Detail: Zener Diode 10V 150mW ±5% Surface Mount SSMini2-F5...
DataSheet: DZ2S10000L datasheetDZ2S10000L Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 10V
Tolerance: ±5%
Power - Max: 150mW
Impedance (Max) (Zzt): 30 Ohms
Current - Reverse Leakage @ Vr: 50nA @ 7V
Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
Operating Temperature: --
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: SSMini2-F5-B
Base Part Number: DZ2S10
Description

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DZ2S10000L application field and working principle

DZ2S10000L diodes belong to the category of single, unidirectional, monolithic components that are specifically designed and manufactured to exhibit a specified breakdown voltage. Typically, for DZ2S10000L, this breakdown voltage is 10,000V. As general-purpose components, DZ2S10000L diodes may be employed in a wide range of applications including power supplies, circuit protection, electromagnetic interference (EMI) filters, pulse generator circuits, and signal clamping circuits.

In general, these single diodes of the DZ2S10000L variety demonstrate various types of operation depending on the circuit configuration. However, regardless of the application, the main function of the diode is to provide a path of low-impedance conduction in one direction while presenting a high-impedance or insulating contention in the opposite direction. This type of conduction-blocking behavior makes it highly suitable for the protection of electronic devices from potential harm.

The basic principle of operation of the DZ2S10000L is quite simple, but requires an understanding of the property of voltage-flow across the diode. In the forward-biased condition, the forward voltage of the diode is modulated by an external current. When the applied forward voltage across the diode is raised above the breakdown threshold voltage, it will begin to conduct forward current above the reverse breakdown voltage. When the voltage across the diode reduces below the breakdown voltage, it will begin to block the reverse flow of current.

Because of the voltage-flow characteristics of the DZ2S10000L, it is designed to be used in such applications that require a robust electrical breakdown threshold that is greater than a conventional rectifier diode. Such applications usually require high power dissipation or high repetitive peak pulses. Furthermore, these components may also be employed in circuits where the high stability, low leakage, and high-temperature operation are primary considerations.

In terms of implementation, the DZ2S10000L diodes may be configured as either single or dual-package. The single-package type is typically configured as a small outline diode and is quite suitable for surface mounting applications, due to its low profile. The dual-package type is normally used for through-hole applications, as it is capable of providing greater levels of current and power dissipation compared to its single-package counterpart.

To ensure the optimum performance of the DZ2S10000L devices, it is essential to ensure that the maximum specified operating temperature and load current is not exceeded. Furthermore, it is important to ensure that the diode is adequately heat-sinked to prevent accidental damage due to over-heating. As a result, it is important to carefully select a device of the appropriate size and power rating for the application in order to ensure the desired performance is achieved.

The specific data is subject to PDF, and the above content is for reference

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