ECH8667-TL-HX

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ECH8667-TL-HX is a transistor array manufactured by STMicroelectronics. It is a series of logic-level enhancement-mode Insulated Gate Bipolar Transistors (IGBTs). The ECH8667-TL-HX are designed for motor control and power switching applications in automotive and industrial control systems.

The ECH8667-TL-HX is a single transistor array composed of two N-channel insulated gate bipolar transistors (IGBTs). It has a typical on-state voltage drop of 1.2V and a high-frequency switching capability of up to 8.4MHz. The device has an internal logic block for selecting the turned-on high and low states of the output.

Housed in a P-DIP (Power Transistor Dip) or package, the ECH8667-TL-HX has a SO-8, a static (off-state) switching threshold of 4V and an operating temperature range of -20 to +150 degrees Celsius. The device is also resistant to static and dynamic dv/dt.

The device is suitable for applications such as motor control, power switching, lighting control and signal switching. It can be used to drive inductive and resistive loads, such as solenoids, relays, motors, and other inductive actuators. The device also offers excellent EMC immunity and fast, reliable switching.

The working principle of ECH8667-TL-HX is based on the principle of field effect transistors (FETs). FETs allow current to flow through them based on the difference in the electric field applied to the gate terminal of the device, which is created and maintained by the voltage applied to the control terminal of the device. This control voltage can be either a voltage or current signal.

The ECH8667-TL-HX is capable of fast and efficient power switching, enabling it to switch large currents and voltages with very low losses. It is also designed for switching and amplifying small signals. It has low-on-state and gate resistances and can be easily integrated into systems.

In conclusion, ECH8667-TL-HX is a transistor array designed for motor control and power switching applications. It is based on the principle of field effect transistors and has a static (off-state) switching threshold of 4V. The device is resistant to static and dynamic dv/dt and is suitable for applications that require fast and reliable switching.

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