EML17T2R

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The EML17T2R is a single, pre-biased, bipolar junction transistor (BJT). It is designed primarily for applications in the radio-frequency (RF) and microwave industries where small size and low capacitance are crucial. It is particularly suited for use in RF amplifiers, direct conversion receivers and switching applications due to its very low dc current level and high breakdown voltage.

In comparison to conventional BJTs, the EML17T2R differs greatly in its construct, with a polysilicon gate, drain, and source layout. This type of BJT is generally thought to be less susceptible to degradation over time following the application of hot temperatures or stressing currents. As a result, the EML17T2R’s polysilicon-gate construction allows it to perform better in terms of stability and reliability, as well as exhibiting better signal-to-noise ratios.

The EML17T2R is also constructed with a low collector-base capacitance, allowing it to operate at higher frequencies without the need for external compensation circuitry. This translates to wider dynamic ranges, increased immunity to noise, faster switching speeds, and improved oscillator and modulator designs.

The BJT has a vertical PN-junction between the collector and base electrodes, with a short circuit formed when the base voltage is sufficient to forward-bias the junction. By varying the base current, the collector current can then be changed in an exponential manner, leading to an amplification effect for small voltage fluctuations.

Though the EML17T2R is an n-p-n device, it still requires a bias voltage to be applied to the base in order to start the transistor’s operation and to allow it to function properly. This bias voltage is known as a pre-biased voltage, and is typically set by a resistor connected to the base-emitter junction. The resistor ensures that the forward-biased voltage is applied even when the transistor is not being used in active mode.

Once the pre-biased voltage is applied, the emitter-base junction is forward-biased, allowing electrons to flow from the emitter to the base, and resulting in current flowing as well as voltage amplification of the transistor. The current flows from the collector to the base, and this current is the effective output current of the EML17T2R.

Due to its low capacitance, the EML17T2R has a relatively low current-gain bandwidth product, meaning that it can only support a small number of high frequency applications. Additionally, the amount of gain also drops at higher frequencies as the capacitance increases, meaning that it is not suitable for use in high-power applications.

In conclusion, the EML17T2R is a type of single, pre-biased, bipolar junction transistor that has been designed for use in the radio-frequency and microwave industries. Its polysilicon gate construction gives it a great deal of stability and improved signal-to-noise ratios, as well as allowing it to support wider dynamic ranges and faster switching speeds. The EML17T2R is limited to supporting low-power applications as its current-gain bandwidth product is quite low, and its gain also drops significantly at higher frequencies.

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