EPC2203 Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	2.5V @ 600µA
Package / Case:	Die
Supplier Device Package:	Die
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 150°C (TJ)
Power Dissipation (Max):	--
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	88pF @ 50V
Vgs (Max):	+5.75V, -4V
Gate Charge (Qg) (Max) @ Vgs:	0.83nC @ 5V
Series:	Automotive, AEC-Q101, eGaN®
Rds On (Max) @ Id, Vgs:	80 mOhm @ 1A, 5V
Drive Voltage (Max Rds On, Min Rds On):	5V
Current - Continuous Drain (Id) @ 25°C:	1.7A
Drain to Source Voltage (Vdss):	80V
Technology:	GaNFET (Gallium Nitride)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction

The EPC2203 field-effect transistor (FET) is a single n-channel metal–oxide–semiconductor FET (MOSFET). It is part of the extended Family of MOSFETs by EPC that provide outstanding performance and advanced feature integration. This device is primarily used in switching and RF applications, featuring fast switching times and high-temperature operation.

Application Field

The EPC2203 MOSFET can be used in a variety of applications, including power supplies, motor control, high-speed switching and RF power amplifiers. Due to its small footprint and low on-resistance, it can be used in applications that require high-power efficiency and low-power dissipation. Additionally, its high switching speed and wide operating temperature range make it suitable for applications in industrial, automotive and telecom/datacom markets, as well as applications that require high-speed switching.

Features and Benefits

The EPC2203 offers several features that make it an ideal choice for many applications. It has a wide voltage range of 0.5V to 20V and can handle the fluctuation of power levels for multiple applications. It is also compatible with a wide-temperature range and can handle continuous operation at high temperatures. Additionally, it has high-switching times, reducing power dissipation and improving power efficiency. Since EPC2203 is a MOSFET, it has an improved noise immunity compared to BJT or other FET transistors.

Working Principle

The EPC2203 is a MOSFET, which is a type of transistor. As a single MOSFET, it works by controlling the flow of electric current between the drain and source terminals with the help of a gate voltage. Depending on the voltage applied to the gate, the current can be directed from the source to drain or from drain to source. The EPC2203 MOSFET can handle higher gate voltages than other FETs due to its high breakdown voltage.The EPC2203 also comes with a built-in body diode, enabling it to conduct current in both directions. When the gate voltage is lower than the drain voltage, the channel is closed and current is conducted through the diode, allowing the EPC2203 to function as a single MOSFET. When the gate voltage is higher than the drain voltage, however, the FET is open and current can be directed either to or away from the source terminal.

Conclusion

The EPC2203 is a single n-channel MOSFET that is used in switching and RF applications. It has a wide voltage range, high switching speed and wide operating temperature range, which makes it suitable for applications that require high-power efficiency and low-power dissipation. Additionally, its built-in body diode allows it to conduct current in both directions. This makes the EPC2203 an ideal choice for a variety of applications, from power supplies and motor control to RF power amplifiers.

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