ES1JLHMQG Allicdata Electronics
Allicdata Part #:

ES1JLHMQG-ND

Manufacturer Part#:

ES1JLHMQG

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE GEN PURP 600V 1A SUB SMA
More Detail: Diode Standard 600V 1A Surface Mount Sub SMA
DataSheet: ES1JLHMQG datasheetES1JLHMQG Datasheet/PDF
Quantity: 1000
20000 +: $ 0.04963
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Description

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Diodes - Rectifiers - Single

ES1JLHMQG diodes are a form of single rectifiers that are used in a range of applications. They are particularly beneficial for applications requiring high power output capability, due to their low voltage drop, making it easier to reduce the voltage level to meet the requirement of the application.

These rectifiers are typically made from an aluminum oxide substrate and polished to reduce their surface roughness and to increase their ability to reflect energy emitted from the cathode. By polishing the substrate and applying a coating, the surface of the diode is better able to reflect the IR radiation that the diode emits, allowing it to more efficiently generate electrical current.

In addition to their primary uses in power applications, ES1JLHMQG diodes are also commonly used as rectifiers in antenna and transducer circuits, as part of the RF power amplification system. They are used to convert the RF signal generated by the antenna into a voltage/current signal that can be used in the amplifier circuit.

The working principle of these diodes is relatively simple. When a voltage is applied across their two terminals, electrons from the anode side move towards the positive terminal, and from the cathode side move towards the negative terminal, thus creating a current between the anode and the cathode. This current between the two pieces of charge generates a light field, which reflects the IR radiation emitted from the cathode to the anode, increasing the efficiency of the diode.

These rectifiers are generally simple to operate, and can be used for a wide range of applications such as power rectification and power semiconductor circuits. Their high power output capabilities, combined with their low voltage drop, make them the ideal choice for many types of power applications. They are extremely reliable, can withstand harsh environments and are relatively low cost.

In conclusion, ES1JLHMQG diodes are a form of single rectifier that can be used in a variety of applications, including power semiconductor and antenna systems. They are typically made from aluminum oxide and polished to increase efficiency, and feature a low voltage drop, making them an ideal choice for applications requiring high power output. Their working principle relies on the movement of electrons, which allows them to efficiently convert RF signals into voltage or current.

The specific data is subject to PDF, and the above content is for reference

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