Allicdata Part #: | ES1JLHMQG-ND |
Manufacturer Part#: |
ES1JLHMQG |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 600V 1A SUB SMA |
More Detail: | Diode Standard 600V 1A Surface Mount Sub SMA |
DataSheet: | ES1JLHMQG Datasheet/PDF |
Quantity: | 1000 |
20000 +: | $ 0.04963 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.7V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 35ns |
Current - Reverse Leakage @ Vr: | 5µA @ 600V |
Capacitance @ Vr, F: | 8pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-219AB |
Supplier Device Package: | Sub SMA |
Operating Temperature - Junction: | -55°C ~ 150°C |
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Diodes - Rectifiers - Single
ES1JLHMQG diodes are a form of single rectifiers that are used in a range of applications. They are particularly beneficial for applications requiring high power output capability, due to their low voltage drop, making it easier to reduce the voltage level to meet the requirement of the application.
These rectifiers are typically made from an aluminum oxide substrate and polished to reduce their surface roughness and to increase their ability to reflect energy emitted from the cathode. By polishing the substrate and applying a coating, the surface of the diode is better able to reflect the IR radiation that the diode emits, allowing it to more efficiently generate electrical current.
In addition to their primary uses in power applications, ES1JLHMQG diodes are also commonly used as rectifiers in antenna and transducer circuits, as part of the RF power amplification system. They are used to convert the RF signal generated by the antenna into a voltage/current signal that can be used in the amplifier circuit.
The working principle of these diodes is relatively simple. When a voltage is applied across their two terminals, electrons from the anode side move towards the positive terminal, and from the cathode side move towards the negative terminal, thus creating a current between the anode and the cathode. This current between the two pieces of charge generates a light field, which reflects the IR radiation emitted from the cathode to the anode, increasing the efficiency of the diode.
These rectifiers are generally simple to operate, and can be used for a wide range of applications such as power rectification and power semiconductor circuits. Their high power output capabilities, combined with their low voltage drop, make them the ideal choice for many types of power applications. They are extremely reliable, can withstand harsh environments and are relatively low cost.
In conclusion, ES1JLHMQG diodes are a form of single rectifier that can be used in a variety of applications, including power semiconductor and antenna systems. They are typically made from aluminum oxide and polished to increase efficiency, and feature a low voltage drop, making them an ideal choice for applications requiring high power output. Their working principle relies on the movement of electrons, which allows them to efficiently convert RF signals into voltage or current.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
ES1JL R3G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
ES1JLW RVG | Taiwan Semic... | 0.06 $ | 66000 | DIODE GEN PURP 600V 1A SO... |
ES1JL RVG | Taiwan Semic... | 0.06 $ | 12000 | DIODE GEN PURP 600V 1A SU... |
ES1JTR | SMC Diode So... | 0.04 $ | 90000 | DIODE GEN PURP 600V 1A SM... |
ES1J-TP | Micro Commer... | -- | 1000 | DIODE GEN PURP 600V 1A DO... |
ES1JAF | ON Semicondu... | -- | 1000 | DIODE GEN PURP 600V 1A DO... |
ES1JLWHRVG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A SO... |
ES1J R3G | Taiwan Semic... | 0.07 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
ES1JE-TP | Micro Commer... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
ES1J-LTP | Micro Commer... | -- | 125000 | DIODE GEN PURP 600V 1A DO... |
ES1J | ON Semicondu... | -- | 22500 | DIODE GEN PURP 600V 1A SM... |
ES1JF R2G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 600V 1A SM... |
ES1J M2G | Taiwan Semic... | -- | 1000 | DIODE GEN PURP 600V 1A DO... |
ES1JL RHG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
ES1JL MHG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
ES1JL MQG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
ES1JL MTG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
ES1JL RQG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
ES1JL RTG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
ES1JL RFG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
ES1JL RUG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
ES1JHM2G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
ES1JLHRHG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
ES1JLHM2G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
ES1JLHMHG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
ES1JLHMQG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
ES1JLHMTG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
ES1JLHRQG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
ES1JFL | ON Semicondu... | 0.08 $ | 6000 | DIODE GEN PURP 600V 1A SO... |
ES1JHR3G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
ES1JL M2G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
ES1JLHR3G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
ES1JLHRFG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
ES1JLHRUG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
ES1JLHRVG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
ES1JP1-7 | Diodes Incor... | 0.0 $ | 1000 | DIODE STD 1A SMDDiode |
ES1JWF-7 | Diodes Incor... | 0.0 $ | 1000 | DIODE STD 1A SMDDiode |
ES1JF R3G | Taiwan Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A SM... |
ES1JFL RVG | Taiwan Semic... | -- | 1000 | DIODE GEN PURP 600V 1A SO... |
ES1JLHRTG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
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