Allicdata Part #: | ES2DHE3_A/HGITR-ND |
Manufacturer Part#: |
ES2DHE3_A/H |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 200V 2A DO214AA |
More Detail: | Diode Standard 200V 2A Surface Mount DO-214AA (SMB... |
DataSheet: | ES2DHE3_A/H Datasheet/PDF |
Quantity: | 1000 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 2A |
Voltage - Forward (Vf) (Max) @ If: | 900mV @ 2A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 20ns |
Current - Reverse Leakage @ Vr: | 10µA @ 50V |
Capacitance @ Vr, F: | 18pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Supplier Device Package: | DO-214AA (SMB) |
Operating Temperature - Junction: | -55°C ~ 150°C |
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The ES2DHE3_A/H rectifier diode is a semiconductor component that is used to regulate current flow in various electrical systems. It is a single-phase, medium-power device with a peak pulse current of 8800A, maximum average forward current of 10A and peak reverse voltage of 400V.
The ES2DHE3_A/H diode is used in a variety of applications such as general rectification, solar panel and LED power supplies, signal processing and other high power applications. It is an ideal choice for applications where a more efficient, low power component is desired. The device exhibits low power losses, and its reverse recovery time is excellent, making it suitable for use in high current, high speed switching applications.
The ES2DHE3_A/H diode works by starting with a negative voltage at its anode, which allows current to flow from the anode to the cathode. This current flow then creates a voltage drop across the diode, allowing the positive and negative sides to be separated. The current then returns to the anode, completing the cycle and producing the rectified output.
In order to properly protect the rectifier diode from external currents, it is highly recommended that it is surrounded by a protective heat sink or adequate shielding which will dissipate the heat generated by the current flow. This helps to reduce the chances of the diode failing.
The ES2DHE3_A/H diode has several advantages over other rectifier diodes, such as greater power efficiency, a low recovery time, and an average junction temperature that is lower than other diodes. It has also been proven to be more reliable than other diodes and is relatively inexpensive. It is a perfect choice for applications where high power is required and the cost of the component is not a major factor.
The ES2DHE3_A/H rectifier diode can be used in a variety of applications, ranging from general rectification, solar panel and LED power supplies, signal processing and other high power applications. This makes it a great choice for any application where a controlled and regulated current flow is needed.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
ES2D-13-F | Diodes Incor... | -- | 9000 | DIODE GEN PURP 200V 2A SM... |
ES2DAHR3G | Taiwan Semic... | 0.08 $ | 1800 | DIODE GEN PURP 200V 2A DO... |
ES2DA R3G | Taiwan Semic... | -- | 5400 | DIODE GEN PURP 200V 2A DO... |
ES2D R5G | Taiwan Semic... | 0.1 $ | 1000 | DIODE GEN PURP 200V 2A DO... |
ES2D-LTP | Micro Commer... | -- | 1000 | DIODE GEN PURP 200V 2A DO... |
ES2D-TP | Micro Commer... | -- | 3000 | DIODE GEN PURP 200V 2A DO... |
ES2DTR | SMC Diode So... | 0.06 $ | 1000 | DIODE GEN PURP 200V 2A SM... |
ES2DAF | ON Semicondu... | 0.1 $ | 1000 | DIODE GEN PURP 200V 2A DO... |
ES2D | ON Semicondu... | -- | 51000 | DIODE GEN PURP 200V 2A DO... |
ES2DA-13-F | Diodes Incor... | -- | 135000 | DIODE GEN PURP 200V 2A SM... |
ES2D-E3/52T | Vishay Semic... | -- | 27750 | DIODE GEN PURP 200V 2A DO... |
ES2D/1 | Vishay Semic... | 0.18 $ | 1000 | DIODE GEN PURP 200V 2A DO... |
ES2DHE3J_A/H | Vishay Semic... | 0.29 $ | 1000 | DIODE GEN PURP 200V 2A DO... |
ES2DRX | Nexperia USA... | 0.0 $ | 1000 | DIODE GEN PURP 200V 2A SO... |
ES2DVRX | Nexperia USA... | 0.0 $ | 1000 | DIODE GEN PURP 200V 2A SO... |
ES2DA M2G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 2A DO... |
ES2DHE3/5BT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 2A DO... |
ES2DAHM2G | Taiwan Semic... | 0.07 $ | 1000 | DIODE GEN PURP 200V 2A DO... |
ES2DV M4G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 2A DO... |
ES2D M4G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 2A DO... |
ES2DHM4G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 2A DO... |
ES2DV R5G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 2A DO... |
ES2DVHM4G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 2A DO... |
ES2DHR5G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 2A DO... |
ES2DVHR5G | Taiwan Semic... | 0.09 $ | 1000 | DIODE GEN PURP 200V 2A DO... |
ES2DPX | Nexperia USA... | 0.0 $ | 1000 | DIODE GEN PURP 200V 2A CF... |
ES2D-M3/5BT | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 200V 2A DO... |
ES2D-M3/52T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 2A DO... |
ES2D-E3/5BT | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 2A DO... |
ES2DHE3_A/I | Vishay Semic... | -- | 6400 | DIODE GEN PURP 200V 2A DO... |
ES2DHE3_A/H | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 2A DO... |
ES2DHE3/52T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 2A DO... |
ES2DHE3J/52T | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 2A DO... |
ES2D-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 200V 2A SM... |
ES2DA-13 | Diodes Incor... | -- | 1000 | DIODE GEN PURP 200V 2A SM... |
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