Allicdata Part #: | FCH041N60F-F085-ND |
Manufacturer Part#: |
FCH041N60F-F085 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N CH 600V 76A TO247 |
More Detail: | N-Channel 600V 76A (Tc) 595W (Tc) Through Hole TO-... |
DataSheet: | FCH041N60F-F085 Datasheet/PDF |
Quantity: | 87 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 595W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 10900pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 347nC @ 10V |
Series: | Automotive, AEC-Q101, SuperFET® II |
Rds On (Max) @ Id, Vgs: | 41 mOhm @ 38A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 76A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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FCH041N60F-F085 is a type of metal-oxide-semiconductor field-effect transistor (MOSFET). It is a lateral N-channel MOSFET with low on-state resistance and fast switching speed, making it a suitable choice for high-power electronic applications. This article will discuss the application fields and working principle of FCH041N60F-F085, as well as its advantages and features.
Application Field
FCH041N60F-F085 can be used for various high-power applications, such as power converters, power factors, motor drivers, and motor control. These transistors can be used for both DC and AC applications. It is well suited for applications wherein low on-state resistance and fast switching speed are required. Furthermore, FCH041N60F-F085 can also be used in renewable energy systems, automotive electronics, power management systems, and home appliances.
Working Principle
MOSFETs are voltage-controlled semiconductors. They are transistors which are capable of controlling large amounts of power with just a small amount of voltage. FCH041N60F-F085 is a lateral N-channel MOSFET. Lateral MOSFETs are constructed of two diffusion processes which occur in the same direction. In an N-channel MOSFET, the channel is a region of positive charge, and the source and the drain terminal regions are negatively charged. When the gate voltage is higher than the voltage of the source region, the channel is depleted and conductive, allowing a current to flow from the source to the drain terminals.
The FCH041N60F-F085 operates in enhancement mode. That is, in order for the channel to be depleted and current to flow, the voltage of the gate terminal must be higher than the voltage of the source terminal. The higher the voltage difference between the gate and source terminals, the larger the current passing through the MOSFET.
Advantages and Features
FCH041N60F-F085 transistors have excellent switching characteristics due to its low on-state resistance and fast switching speed. This makes them suitable for high-power electronic applications. Additionally, they have a wide operating temperature range of -55 to +150C, which makes them suitable for a variety of applications. Furthermore, FCH041N60F-F085 transistors have a low gate-source voltage threshold, meaning that a small amount of voltage can produce a large amount of current. Finally, these transistors are also very efficient as they do not require much energy to operate.
In conclusion, FCH041N60F-F085 transistors are a suitable choice for high-power electronic applications. They have excellent switching characteristics and a wide operating temperature range, which makes them well suited for a variety of applications. Furthermore, they have a low gate-source voltage threshold and are very efficient, making them an ideal choice for power converters, power factors, motor drivers, and motor control applications.
The specific data is subject to PDF, and the above content is for reference
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