FCPF1300N80Z

Vgs(th) (Max) @ Id:	4.5V @ 400µA
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220F
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	24W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	880pF @ 100V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	21nC @ 10V
Series:	SuperFET® II
Rds On (Max) @ Id, Vgs:	1.3 Ohm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	4A (Tc)
Drain to Source Voltage (Vdss):	800V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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The FCPF1300N80Z is an 800 V N-channel MOSFET designed to handle particularly high drain. It is a power MOSFET with a high breakdown voltage and is capable of continuous drain currents up to 130 A. It has a low on-resistance and is suitable for a wide range of applications requiring low Rds (on).The FCPF1300N80Z is primarily intended for use in switching power supplies, DC-DC converters, AC-DC converters and other high power applications. It is a versatile device and can be used in many other applications including motor control, switching, relay drivers and load switch.A MOSFET is a broad class of devices used in power electronics where switching needs to be performed with low conduction losses. The FCPF1300N80Z is an N-channel MOSFET, and utilizes the same design principles as other MOSFETS: when a voltage is applied to the appropriate gate of the MOSFET, the threshold voltage is met, and this allows the current to flow from the drain (source) to the source terminal, thus energizing the load. The on-state resistance of the MOSFET is measured by Rds (on) and for this MOSFET, it is extremely low at 0.012 Ohms. This ensures efficiency in power handling and low conduction losses.The FCPF1300N80Z is designed to operate under high temperature and voltage swings. Its maximum drain-source voltage is 800V and the maximum operating temperature is 175°C. This allows the MOSFET to be used in applications where there is a high voltage requirement and high temperature environment.The FCPF1300N80Z also has an integrated junction body diode that allows the current to flow in reverse direction, protecting the circuit from damage. The MOSFET also features features such as dV/dt and dI/dt protection, short-circuit protection, over-temperature protection, EMI/RFI protection, and ESD protection to ensure that the circuits that the MOSFET is used in operates reliably and safely.The FCPF1300N80Z is an invaluable tool for engineers working in power electronics applications, as it offers a high level of performance and a wide variety of features. It is a versatile device that can be used in a variety of high power applications, and its low Rds (on) ensures power efficiency and low conduction losses.

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