Allicdata Part #: | FD600R06ME3_B11_S2-ND |
Manufacturer Part#: |
FD600R06ME3_B11_S2 |
Price: | $ 101.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT MODULE VCES 600V 600A |
More Detail: | IGBT Module Trench Field Stop Single Chopper 600V ... |
DataSheet: | FD600R06ME3_B11_S2 Datasheet/PDF |
Quantity: | 1000 |
10 +: | $ 91.91630 |
Specifications
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Single Chopper |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 600A |
Power - Max: | 2250W |
Vce(on) (Max) @ Vge, Ic: | 1.6V @ 15V, 600A |
Current - Collector Cutoff (Max): | 5mA |
Input Capacitance (Cies) @ Vce: | 60nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 125°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
Description
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Introduction
The FD600R06ME3_B11_S2 transistor module is a modern integrated circuit that has a wide range of applications, including high current switching as well as voltage amplification. Its superior performance and reliability make it ideal for various applications in the field of power electronics. This article will explore the various applications of the FD600R06ME3_B11_S2 transistor module and discuss its working principle and design.Applications of the FD600R06ME3_B11_S2 Transistor Module
The FD600R06ME3_B11_S2 transistor module is ideal for applications such as high current switching, motor control, and switching-mode power supplies. It is particularly well-suited for high current applications due to its superior performance and reliability. The module also features low power dissipation and low gate capacitive current, making it an attractive option for applications requiring high power and efficiency.The module is also suitable for use in adjustable speed and torque control systems, such as robotic arms, drones and automotive applications. Additionally, the FD600R06ME3_B11_S2 transistor module can be used in voltage regulation systems as it offers excellent speed response and good current control. In addition, it is suitable for applications such as rectification, DC to AC inverters and AC to AC convertors.Working Principle of the FD600R06ME3_B11_S2 Transistor Module
The FD600R06ME3_B11_S2 transistor module is an integrated circuit, known as an Insulated Gate Bipolar Transistor (IGBT), that uses a power semiconductor switch to control the voltage and current flowing through a circuit. The IGBT consists of two sets of transistors, an N-type and a P-type semiconductor, each with a dielectric insulation layer between them.The N-type and P-type transistors are then connected to the power and gate terminals which, when conducting, allow the IGBT to act as a switch, controlling the voltage and current conducted throughout the circuit. When the power terminal of the IGBT is switched on, it allows current to flow between it and the gate terminal, effectively turning on the IGBT. Conversely, when the power terminal is switched off, no current flows and the IGBT remains off.Design of the FD600R06ME3_B11_S2 Transistor Module
The FD600R06ME3_B11_S2 transistor module is a fully-packaged module containing a single IGBT integrated circuit. It features low power loss, low gate capacitive current and fast switching speeds. The module is available in a variety of packages, including TO-247, TO-268 and D2PAK formats. These packages make the module suitable for use in a variety of applications, including for high frequency switching and high current switching applications.The FD600R06ME3_B11_S2 transistor module is designed to operate at voltages up to 600V and currents of up to 6A. It is designed with an advanced voltage feedback loop, which protects the internal IGBT against overvoltage and excessive currents. It also features a separate temperature control circuit, which monitors the temperature of the module\'s die and automatically shuts down the device if the temperature exceeds a certain level.Conclusion
In conclusion, the FD600R06ME3_B11_S2 transistor module is a modern integrated circuit designed with a wide range of applications. It is particularly well-suited for use in high current switching and adjustable speed control systems. It features a low power dissipation, low gate capacitive current and fast switching speeds. The FD600R06ME3_B11_S2 transistor module is available in a variety of packages, making it suitable for a wide range of applications.The specific data is subject to PDF, and the above content is for reference
Related Products
Search Part number : "FD60" Included word is 6
Part Number | Manufacturer | Price | Quantity | Description |
---|
FD600R06ME3_B11_S2 | Infineon Tec... | 101.11 $ | 1000 | IGBT MODULE VCES 600V 600... |
FD600R06ME3S2BOSA1 | Infineon Tec... | 107.76 $ | 1000 | IGBT MODULE VCES 600V 600... |
FD600R17KE3B2NOSA1 | Infineon Tec... | 678.79 $ | 1000 | IGBT MODULE VCES 600V 600... |
FD600R17KE3KB5NOSA1 | Infineon Tec... | 0.69 $ | 1000 | IGBT MODULE VCES 600V 600... |
FD600R12KF4NOSA1 | Infineon Tec... | 0.0 $ | 1000 | IGBT MODULE 1200V 600AIGB... |
FD6000016 | Diodes Incor... | 3.31 $ | 1000 | OSCILLATOR XO 60.000MHZ C... |
Latest Products
APTGF150H120G
IGBT MODULE NPT FULL BRIDGE SP6IGBT Modu...
MWI80-12T6K
MOD IGBT SIXPACK RBSOA 1200V E1IGBT Modu...
APTGT50A170T1G
IGBT MOD TRENCH PHASE LEG SP1IGBT Module...
APTGLQ50TL65T3G
POWER MODULE - IGBTIGBT Module Trench Fi...
FT150R12KE3B5BOSA1
PWR MODULEIGBT Module
FZ900R12KF5NOSA1
POWER MOD IGBT 1200V A-IHM130-2IGBT Modu...