FDBL0630N150 Discrete Semiconductor Products

Introduction

FDBL0630N150 is a field effect transistor (FET). FETs are sometimes referred to as unipolar transistors, as, unlike bipolar transistors, they have only one carrier type. A FET can be either an n-channel or a p-channel type, and FDBL0630N150 is a n-channel FET. The device is manufactured by Fairchild Semiconductor, and designed for logic level enhancement and low voltage switching applications.

Application Field

FDBL0630N150 is designed with the factor of low gate threshold voltage of 1.0V max. This makes it suitable for applications such as switching power supply control, infrared remote control signals, LED driving, LED backlight inverters, and as a load switch and general switching operations. FDBL0630N150 can also be used to replace bipolar transistors in many applications, given its fast switching speed, low power dissipation capability and high breakdown voltage. The low gate threshold voltage and low on-state resistance yields low on-state drive, while the logic level enhancement mode makes the device suitable for digital circuits.

Other applications of FDBL0630N150 are in telecommunications, automotive and industrial control systems, LCD backlighting circuits, automotive sensors, instrumentation, medical equipment, and embedded systems.

Working Principle

FDBL0630N150 is a n-channel depletion-modeFET. Comparing with enhancement-mode FETs, depletion-mode FETs are normally used as switches. They do not require a gate voltage in order to turn the transistor "on". That is, the device will be“on” even when the gate input is low or disconnected.

FDBL0630N150 is operated in enhancement mode which means the turn-on voltage is positive. When the positive gate voltage increase to the threshold voltage, the channel between the drain and source is formed and the device is turned "on". As the voltage continue to rise, the channel conductance will increase and the FET will be in “saturation region”. This turns the device on fully and allows current to flow between the drain and the source.

The off-state, or when the FET is in “cut-off region”, is the opposite. A negative gate voltage will reduce the channel between the drain and the source until it eventually disappears and the device turns "off", or no current will flow.

In addition, FDBL0630N150 also offers a logic level enhancement mode. This means that the FET can operate down to a very low voltage, 1.0V typically, making it suitable for digital applications. As the device is a n-channel type, it has a lower on-state resistance and higher current carrying capability.

Conclusion

In summary, FDBL0630N150 is an n-channel FET with a low gate threshold voltage of 1.0V max and low on-state resistance. It is designed for applications such as logic level enhancement, low voltage switching and digital circuits. It is commonly used in telecommunications, automotive and industrial control systems, LCD backlighting circuits, automotive sensors and embedded systems.