| Allicdata Part #: | FDH50N50-F133-ND |
| Manufacturer Part#: |
FDH50N50-F133 |
| Price: | $ 6.92 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 500V 48A TO-247 |
| More Detail: | N-Channel 500V 48A (Tc) 625W (Tc) Through Hole TO-... |
| DataSheet: |  FDH50N50-F133 Datasheet/PDF |
| Quantity: | 385 |
| 1 +: | $ 6.29370 |
| 10 +: | $ 5.66622 |
| 450 +: | $ 4.28109 |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 625W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 6460pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 137nC @ 10V |
| Series: | UniFET™ |
| Rds On (Max) @ Id, Vgs: | 105 mOhm @ 24A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 48A (Tc) |
| Drain to Source Voltage (Vdss): | 500V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The FDH50N50-F133 is a single N-Channel metal oxide semiconductor field-effect transistors (MOSFET) that is offered in a TO-220 package. It is produced by the company Fairchild Semiconductor Corporation and is designed for use in various applications such as in automotive electronics, computing and peripheral, industrial control, and mobile devices. The MOSFET has a drain-source voltage of 50 V and a drain-source current of 50 A. It also has a channel length of 0.133 mm and a gate threshold voltage of 5 V. In addition, it is rated for operation from -55 to 175 degrees Celsius.
The FDH50N50-F133 MOSFET is primarily used in applications requiring a combination of high current, low voltage, and high switching speeds. Examples include motor control, DC-DC converters, battery management systems, switch mode power supplies, and synchronous rectifiers. This MOSFET is also suitable for use in high power pulsed applications such as induction heating, welding, and plasma cutting.
The working principle of the FDH50N50-F133 MOSFET is based on the transistor effect. This effect occurs when an electrical field is applied to a MOSFET, causing a physical change in the arrangement of the transistor\'s source, gate, and drain terminals. This change in arrangement allows the current to flow from the source to the drain without passing through the gate. The gate terminal has the ability to control this flow of current, allowing the MOSFET to be used as a voltage-controlled switch, enabling it to be used for a variety of applications.
The FDH50N50-F133 is a high-performance single N-Channel MOSFET that offers superior performance in a wide range of applications. Its small package size, low on-state resistance, low gate charge, and fast switching speeds make it ideal for use in a variety of power management solutions. Its wide operating temperature range also makes it suitable for use in harsh environments. By utilizing the FDH50N50-F133, designers can ensure that their applications will deliver reliable and efficient performance.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| FDH50N50 | ON Semicondu... | -- | 1000 | MOSFET N-CH 500V 48A TO-2... |
| FDH5500-F085 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 55V 75A TO-24... |
| FDH50N50-F133 | ON Semicondu... | 6.92 $ | 385 | MOSFET N-CH 500V 48A TO-2... |
| FDH5500 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 55V 75A TO-24... |
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