Allicdata Part #: | FDMC8010DCOSTR-ND |
Manufacturer Part#: |
FDMC8010DC |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2 N-CH 30V 157A 8-PQFN |
More Detail: | N-Channel 30V 37A (Ta) 3W (Ta) Surface Mount 8-PQF... |
DataSheet: | FDMC8010DC Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 8-PowerWDFN |
Supplier Device Package: | 8-PQFN (3.3x3.3) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3W (Ta) |
FET Feature: | Standard |
Input Capacitance (Ciss) (Max) @ Vds: | 7080pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 94nC @ 15V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.28 mOhm @ 37A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 37A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The FDMC8010DC is a high-voltage fast-switching N-channel power MOSFET. With integrated Miller capacitance, it is designed for high-speed switching applications operating at low-voltages under high temperature conditions. The FDMC8010DC features a low thermal resistance, low gate charge and an improved RDS(ON) figure of merit. It’s also suitable for fast-switching high power supplies.
The FDMC8010DC is a P-channel enhancement-mode silicon MOSFET that has a dielectric coating made with different layers. This coating allows for fast switching capabilities due to the high-frequency response characteristics of the FDMC8010DC. The product has an operating temperature range of -55°C to +150°C and is available in a variety of packages.
The FDMC8010DC utilizes a unique gate insulation structure that combines a thick gate oxide layer with a high-dielectric-constant gate insulator. This unique structure allows the device to sustain high reverse blocking voltages while providing excellent current carrying capability. The product also features a high-current capability with a low gate-to-source capacitance, and is suitable for high-speed switching applications.
The FDMC8010DC has a fast switching time, which is useful for applications operating under high temperature conditions. This makes the product suitable for applications such as power supplies, automotive power converters and motor control. The device is also suitable for high-speed switching applications, as it can switch from high to low voltage in less than 10 nanoseconds.
The FDMC8010DC is designed for high-voltage fast-switching applications and features a low gate charge, a low RDS(ON) figure of merit, and a low thermal resistance. This product is suitable for a wide range of power supply applications and is available in a variety of packages.
In summary, the FDMC8010DC is a P-channel power MOSFET that is designed for high-voltage and fast-switching applications. This device has a unique gate insulation structure that allows for high-current carrying capability and a fast-switching speed. The FDMC8010DC is suitable for a wide range of power supply applications and is available in a variety of packages.
The specific data is subject to PDF, and the above content is for reference
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