| Allicdata Part #: | FDMS8020TR-ND |
| Manufacturer Part#: |
FDMS8020 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 30V 26A 8-PQFN |
| More Detail: | N-Channel 30V 26A (Ta), 42A (Tc) 2.5W (Ta), 65W (T... |
| DataSheet: | FDMS8020 Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Package / Case: | 8-PowerTDFN |
| Supplier Device Package: | 8-PQFN (5x6) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.5W (Ta), 65W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3800pF @ 15V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 61nC @ 10V |
| Series: | PowerTrench® |
| Rds On (Max) @ Id, Vgs: | 2.5 mOhm @ 26A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 26A (Ta), 42A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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FDMS8020 application field and working principle are two aspects of power MOSFET technology, which are important for many industrial and consumer applications. FDMS8020 is a single-gate, half-bridge MOSFET with a breakdown voltage of 20 V. This device has an integrated dc-to-dc conversion circuit and a high-side switch with a maximum drain-source voltage of 60V and a drain-source current of 1.5A.
The FDMS8020 application field includes applications such as dc-dc converters, battery chargers, and automotive power systems, and the device can be used as an adjustable voltage regulator or power supply in the aforementioned applications. This MOSFET can also be used in LED strip lights, LED dimmers, and LED controllers, as well as in electric vehicles, electric bicycles, and other high-power electric applications.
The FDMS8020 also has a low on-state resistance of 4 mΩ, a gate-source threshold voltage of 1.5 V, a thermal resistance of 4.3 K/W, and a gate charge of 300 μC. This makes the FDMS8020 a great choice for many power electronics applications where a low on-state resistance and low gate charge are required.
The FDMS8020 is a depletion-type MOSFET, which means that it has higher on-state gate-source voltage than an enhancement-type MOSFET. This is advantageous because it allows for increased current flow without increasing the voltage across its drain-source, which reduces power losses and increases efficiency. The low gate charge of the FDMS8020 also contributes to its efficiency due to its lower switching losses.
The working principle of the FDMS8020 is relatively straightforward. When a voltage is applied to the gate-source, a depletion layer is formed around the source region of the MOSFET. This layer blocks current flow from the source to the drain, thus keeping the device in an “off” state. Conversely, when a negative voltage is applied to the gate-source, it decreases the depletion layer, allowing current to flow from the source to the drain, thus turning the device “on”. The voltage applied to the gate-source to create this toggle effect is called the threshold voltage.
In conclusion, the FDMS8020 is a useful power MOSFET with applications in many industrial and consumer products. Its low on-state resistance, high-side switch, and low gate charge are particularly beneficial for applications needing efficient operation. The working principle of the device is based on the creation of a depletion layer that shuts off or on the flow of current from the source to the drain. This makes it an excellent choice for many power electronics applications.
The specific data is subject to PDF, and the above content is for reference
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FDMS8020 Datasheet/PDF