FDMS86381-F085

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FDMS86381-F085 is a single n-channel enhancement mode Field Effect Transistor (FET). It is designed to have low on-resistance with low gate charge for high switching frequencies as well as improved avalanche energy, making it suitable for various applications including power conversion, motor control, audio and high-speed switching.

The FDMS86381-F085 is designed to withstand high voltages of up to 55V and delivers current in the range of 11A with a low on-resistance of 4m⋅. The device is also rated a junction temperature of 175℉ and operating temperature range of -55℉-175℉.

It is important to understand the working principle and application field of FDMS86381-F085. This device is a type of Field Effect Transistor (FET) which functions by using an electric field to control the conductivity of a semiconductor material. The FET is basically made up of two regions, the source and the drain. A small electric charge is applied to the gate of the device, which creates an electric field. This electric field creates an inversion layer or depletion region in the semiconductor channel between the source and drain, which regulates the current flow between the source and the drain.

The FDMS86381-F085 is designed to be highly suitable for applications that require low on-resistance with low gate charge for high switching frequencies. It has a low total gate charge of 8.5 nC, making it suitable for high speed switching application, as well as its low on-resistance makes it ideal for power conversion, motor control and audio application. It can also be used in high temperature and high voltage applications, with its junction temperature ratings up to 175°C and up to 55V supply.

In summary, the FDMS86381-F085 is a single n-channel enhancement Field Effect Transistor designed for high-speed switching and power conversion applications, its ability to regulated current flow between the source and drain makes it highly suitable for a wide range of applications. The device is rated for operation temperatures up to 175° C, and has a low gate charge of 8.5 nC which makes it ideal for high-speed switching applications.

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