FDR8508P Allicdata Electronics
Allicdata Part #:

FDR8508P-ND

Manufacturer Part#:

FDR8508P

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET 2P-CH 30V 3A SSOT-8
More Detail: Mosfet Array 2 P-Channel (Dual) 30V 3A 800mW Surfa...
DataSheet: FDR8508P datasheetFDR8508P Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: PowerTrench®
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3A
Rds On (Max) @ Id, Vgs: 52 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 15V
Power - Max: 800mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Gull Wing
Supplier Device Package: SuperSOT™-8
Description

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The FDR8508P is a type of voltage-controlled FET array with five n-channel enhancement-mode depletion-mode MOSFETs. It is commonly used in electronics and replacement of common bipolar transistors (BJT). The type-P has an industry-standard package with a low on-resistance and is best suited for fast switching applications.

The working principle of the FDR8508P is based on the flow of electric current through the MOSFETs. When an electric current is sent to the gate of the MOSFET, it causes the channel to become highly conductive, and the electric current flows more easily through the channel. This process is referred to as channel enhancement. As the gate voltage increases, the conductivity of the channel increases, resulting in higher current flow. Similarly, when the gate voltage decreases, the conductivity of the channel decreases, resulting in lower current flow.

FDR 8508P can be used in a wide range of applications such as motor control, switch mode power supplies, audio amplifiers, sinusoidal driver, load controllers, and frequency converters. As it is highly reliable and has a low on-resistance, it can be used in various applications that require switching of high power. It is also suitable for use in multi-state electronic devices where it can be used to switch between different power levels. Moreover, its strong immunity to the environment, such as temperature, humidity, and chemicals make it one of the most reliable components to use for application.

In conclusion, the FDR 8508P is a voltage controlled FET array with five n-channel enhancement-mode depletion-mode MOSFETs. It is used in a variety of applications, from motor control to audio amplifiers. It has a low on-resistance, high reliability, and strong immunity to the environment. This makes it an ideal choice for application in many different types of high power switching applications.

The specific data is subject to PDF, and the above content is for reference

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