Allicdata Part #: | FDS3612-ND |
Manufacturer Part#: |
FDS3612 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 3.4A 8SOIC |
More Detail: | N-Channel 100V 3.4A (Ta) 2.5W (Ta) Surface Mount 8... |
DataSheet: | FDS3612 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 632pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 120 mOhm @ 3.4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 3.4A (Ta) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The FDS3612 is a type of MOSFET, which stands for metal-oxide-semiconductor field-effect transistor. It is a single-gate device and highly efficient in terms of its power consumption, as it is built on a thin film of insulating material. The FDS3612 is also characterized by its low on-resistance and extremely high switching speeds, making it ideal for a wide range of medium- to high-power applications.
The FDS3612 works by taking a small electrical voltage or current and amplifying it into a much larger voltage or current. It is often used in various types of power semiconductor devices and is found in circuits where high frequency switching, low on-resistance, low capacitance, and low power consumption are desired. The FDS3612 is also highly reliable and produces very low levels of noise and electromagnetic interference.
The FDS3612 has several important applications. It is often used in power conversion operations, such as converting AC power to DC power for applications including motor control, inverters, and solar energy systems. It is also commonly used in audio amplifiers and preamps, as well as other circuits and devices where high-frequency switching, low on-resistance, and high-power capabilities are desired.
The working principle of the FDS3612 is relatively straightforward. It operates on the principle of voltage fluctuation, wherein the operation of the MOSFET is controlled by a small current. As the voltage applied to the gate of the device varies, the drain-source current changes accordingly. This mechanism is used to control and regulate the current flow through the circuit.
Since the FDS3612 operates on the principle of voltage fluctuation, it is important to maintain the gate voltage within a certain range. If the voltage is too low, the device will not switch properly. However, if gate voltages are too high, the device may be damaged or experience significant power losses. Furthermore, if too much current is applied to the drain, the FDS3612 can experience thermal runaway and meltdown.
The FDS3612 is highly efficient and useful in a variety of applications. It is characterized by its low on-resistance, high switching speeds, and low noise and electromagnetic interference levels. It is often used in power conversion operations, audio amplifiers and preamps, and other circuits or devices that require high-frequency switching, higher on-resistance, and higher power capabilities. The FDS3612 is also noted for its reliability and robustness, making it well suited for a range of medium- to high-power applications.
The specific data is subject to PDF, and the above content is for reference
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