Allicdata Part #: | FDU8782-ND |
Manufacturer Part#: |
FDU8782 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 25V 35A I-PAK |
More Detail: | N-Channel 25V 35A (Tc) 50W (Tc) Through Hole TO-25... |
DataSheet: | FDU8782 Datasheet/PDF |
Quantity: | 1000 |
Series: | PowerTrench® |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 25V |
Current - Continuous Drain (Id) @ 25°C: | 35A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 11 mOhm @ 35A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1220pF @ 13V |
FET Feature: | -- |
Power Dissipation (Max): | 50W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-251AA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
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The FDU8782 is a versatile power field-effect transistor (FET) that can be used for many different applications. It is a single-gate, unclamped non-overlapping, FET with a wide range of current ratings. This FET is used in many areas where high current is needed and the gate-voltage (VGS) is low. It is ideal for power control and switching, voltage regulation, and other applications where very fast switching is required.
The FDU8782 is based on the JEDEC DOS-9 MOSFET process, which utilizes advanced fabrication methods to produce the highest possible performance. It is designed for high speed switching, low on-resistance, and low power dissipation. It is the main component in a gate-controlled AC switch, used in inverters, motor controllers, and other applications where high speed switching is required.
To understand the working principle of the FDU8782, it is important to be familiar with MOSFETs and their characteristics. MOSFETs are transistors that use an insulated gate to control the flow of current. This gate is electrically insulated from the gate channel and allows the current to flow between the source and drain terminals when the gate voltage (VGS) is applied. MOSFETs are voltage-driven devices and can be used for amplifying and switching electrical signals.
When the gate voltage (VGS) is applied, the device is turned ON, allowing current to flow through the channel. As the gate voltage (VGS) is increased, the current will increase up to a certain point. When the maximum current is reached, the device will saturate and the current will decrease again. This characteristic is a result of the decreased velocity of electrons in the device due to increased gate voltage (VGS).
At low gate voltages (VGS), the FDU8782 can be used to control the flow of current. At higher gate voltages (VGS), the device can be used as a switch. It can be used in many applications where fast switching is required, such as in power control and switching, voltage regulation, and other applications.
The FDU8782 has excellent electrostatic discharge (ESD) protection capabilities, making it suitable for use in high ESD environments. It also has very low on-resistance, making it well suited for power switching applications. The FDU8782 is available in three different packages, making it suitable for both commercial and industrial applications.
The FDU8782 is a versatile power field-effect transistor (FET) that can be used in many applications. It is designed for high speed switching, low on-resistance, and low power dissipation. It is suitable for use in high ESD environments and is available in three different packages. With its wide range of current ratings, the FDU8782 is ideal for power control and switching, voltage regulation, and other applications where fast switching is required.
The specific data is subject to PDF, and the above content is for reference
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