FGH40N65UFDTU

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• Transistors
• IGBTs
• Single
• The FGH40N65UFDTU is a field-stop IGBT that is designed to stand up to the toughest of environments. It has a designed gate to emitter voltage breakdown of 700V and a blocking voltage of up to 700V. The design also incorporates a shielded gate, which reduces electrical noise and a timing adjustable turn-off, making it a suitable choice for use in power conversion and medium power switching applications.
• The FGH40N65UFDTU is a constructed in two parts, with an IGBT (Insulated Gate Bipolar Transistor) mounted on an insulated substrate. The IGBT is composed of an N-type semiconductor layer and a P-type layer, which are separated by a thin dielectric layer. This structure allows for the IGBT to be easily switched on or off by applying a small voltage.
• The IGBT works by controlling the current flowing between two terminals. This is achieved by a change in the voltage across the gate and emitter of the IGBT. When a small voltage is applied to the gate terminal, the transistor switches on and current flows between the emitter and collector terminals, while when the voltage is removed, the transistor switches off and current ceases.
• The FGH40N65UFDTU is suitable for use in applications such as motor control, converters, lighting dimmers and solar inverters. Its high blocking voltage also means it can be used in a variety of industrial and automotive applications. Its shielded gate also makes it a desirable choice for use in noise sensitive environments.
• The FGH40N65UFDTU is suitable for use in a variety of applications due to its design and robust construction. Its high switching speed and adjustable turn-off time make it desirable for use in a variety of power applications, while its high blocking voltage means it can be used in industrial and automotive applications. Its shielded gate also makes it a desirable choice for use in noise sensitive environments.

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