Allicdata Part #: | FJN3310RBU-ND |
Manufacturer Part#: |
FJN3310RBU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS NPN 300MW TO92-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | FJN3310RBU Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Resistor - Base (R1): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 250MHz |
Power - Max: | 300mW |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
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The FJN3310RBU is a single, pre-biased, bipolar junction transistor (BJT) with a number of potential applications and operating principles. The pre-biased feature allows it to be used in applications that require a higher degree of power stability than non-pre-biased devices, while its single BJT structure enables the FJN3310RBU to handle higher current flow than other transistor types.
The FJN3310RBU is used in a variety of low- and medium-power applications, such as power management and regulation, voltage regulation and load switching. The FJN3310RBU is also well-suited for amplifiers and other applications that require robust control of voltage and current. In addition, the FJN3310RBU is used for basic switching, such as in relays and motor speed control.
At its most basic, the FJN3310RBU works by providing a way to control the amount of current that passes through it from an input signal. When an input signal is applied to the base, it induces a current in the collector-emitter circuit, which is dependent on the current gain of the device. This process is known as current amplification and is the basis of how most transistors function.
In order to achieve out of the box performance without complex biasing, the FJN3310RBU transistor is pre-biased with a voltage of 4V between the base and emitter. This bias ensures that the FJN3310RBU is unidirectional in its current flow, allowing it to operate at a constant voltage and current level without having to be adjusted. This feature allows the FJN3310RBU to handle much higher current levels than other transistors without additional biasing, while also helping to stabilize the power of the device.
The FJN3310RBU transistor also has the ability to operate at both high and low-frequency inputs, making it well-suited for a variety of operations. Additionally, the FJN3310RBU is rated for 125 °C operation, making it well-suited for applications that require higher temperature operation. The FJN3310RBU is also characterized for applications up to 1.9GHz, which provides a level of flexibility to designs that require higher frequencies of operation.
The FJN3310RBU is a versatile device that is suitable for many applications, both in the hobbyist and professional level. Its pre-biased structure allows it to be used safely in a variety of applications without complex biasing and its junction field-effect structure provides excellent current gain and power switching capabilities. Its rated temperature and frequency range make it suitable for a wide variety of use cases, making it a popular choice as an all-in-one device.
The specific data is subject to PDF, and the above content is for reference
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