FJN598JABU Allicdata Electronics
Allicdata Part #:

FJN598JABU-ND

Manufacturer Part#:

FJN598JABU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: JFET N-CH 20V 0.15W TO92
More Detail: JFET N-Channel 20V 1mA 150mW Through Hole TO-92-3
DataSheet: FJN598JABU datasheetFJN598JABU Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 20V
Current - Drain (Idss) @ Vds (Vgs=0): 100µA @ 5V
Current Drain (Id) - Max: 1mA
Voltage - Cutoff (VGS off) @ Id: 600mV @ 1µA
Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 5V
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Base Part Number: FJN598
Description

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The JFET transistor, type FJN598JABU, is an acronym for junction field effect transistor. It is an active semiconductor device that operates as an electronically-controlled switch, allowing the flow of electrical current between two points when a potential difference is applied to a control terminal. JFET transistors have a wide variety of applications, ranging from amplifiers to power supplies, and are used in a multitude of circuit designs.

The FJN598JABU JFET transistor is designed to operate at up to 200V, with low static power dissipation and a low gate leakage current. Its high current-handling capability makes it suitable for power switch circuits and high-power audio amplifiers, and its dual-gate configuration also makes it ideal for use in logic and timing circuits. As with most types of transistors, the FJN598JABU has a full complement of characteristics, including high gain-bandwidth product, low input bias and gate capacitance, and low temperature drift.

The working principle of the FJN598JABU is based on the physics of semiconductor junctions. It uses a two-terminal junction diode, or depletion-mode MOSFET, to control the flow of current between two terminals – the source and the drain. When a control voltage is applied to the gate terminal of the FJN598JABU, the depletion zone of the junction diode increases and the resistance of the device decreases, allowing current to flow through the source and drain of the FJN598JABU. A higher voltage applied to the gate will produce greater current flow, and a lower voltage is used to reduce current flow to zero. As the control voltage is adjusted, the flow of current can be controlled over a wide range.

The applications of the FJN598JABU are many and varied. It can be used as a linear amplifier, an audio amplifier, a voltage regulator, a power amplifier, a switching regulator, or a high-voltage switch. It can also be used in radio and television circuitry, as well as in computer logic circuits, to provide reliable switching of current flow. Additionally, the FJN598JABU can be used in motor control appliances, oscillators and timers.

In conclusion, the FJN598JABU junction field effect transistor can be used in a variety of applications and circuit designs. Its low static power dissipation, wide operating range, and low gate leakage current make it particularly suitable for power switch circuits, audio amplifiers, and high-voltage switching circuits. With its dual-gate configuration, the FJN598JABU is also ideal for use in logic and timing circuits. Its versatile design makes it a practical choice for a wide range of electronics projects.

The specific data is subject to PDF, and the above content is for reference

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