Allicdata Part #: | FJX4010RTF-ND |
Manufacturer Part#: |
FJX4010RTF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS PNP 200MW SOT323 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | FJX4010RTF Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Resistor - Base (R1): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 200MHz |
Power - Max: | 200mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SOT-323 |
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The FJX4010RTF is a single, pre-biased bipolar transistor. This type of transistor is used in a wide variety of applications and can be divided into two different categories. On one side are those that are used in basic power which are highly reliable and efficient. On the other side are those used for high-voltage applications, where higher performance is needed due to their increased device voltage.
The FJX4010RTF is mainly used in power semiconductor applications as it is pre-biased and can handle higher current compared to unprocessed like the 2N3055. Its breakdown voltage is rated around 175V, making it ideal for use in heavy-duty application circuits. Its maximum emitter-base voltage season VEBO is 1.5V and the maximum collector-base voltage VBCC is 180V.
The FJX4010RTF is available with a range of ratings. Its power dissipation is 6W, making it suitable for applications such as in junction boxes, light dimmers, and pulse applications. Its collector-emitter voltage VCEO is rated at 60V, meaning it can also be used for digital circuitry. Its collector-base breakdown voltage is rated at 150V, allowing for safety and performance, and its maximum collector current is rated at 600mA.
The FJX4010RTF is typically used in switching applications and works on the principle of a switched current source. When the transistor is in the switch-on state, the transistor opens the gate and allows current to flow from the collector (via the emitter) to the base. The base current is regulated, thus ensuring that the voltage of the transistor switch stays in its "on" state.
The transistor also works on the principle of a switched current sink when the device is in the switch-off state. During the off-state, the base current is disconnected and the transistor will pull current, resulting in the transistor voltage dropping. When this happens, the transistor switch is in its "off" state.
The FJX4010RTF is suitable for a wide range of applications. Its main applications include switching of DC voltage, power control, and power management in industrial and consumer electronics. Its high-voltage and current capability makes it well suited for high-power applications in automotive, aerospace, and military equipment. Its low-power and high speed switching capabilities also make it a good choice for digital logic applications.
In summary, the FJX4010RTF is a single, pre-biased bipolar transistor. It is mainly used in power semiconductor applications,in junction boxes, light dimmers and pulse applications. Its switch-on and switch-off state is based on the principle of a switched current source and sink and it is suitable for a wide range of applications in both industrial and consumer electronics.
The specific data is subject to PDF, and the above content is for reference
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