FLZ6V8A Discrete Semiconductor Products |
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Allicdata Part #: | FLZ6V8ATR-ND |
Manufacturer Part#: |
FLZ6V8A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE ZENER 6.5V 500MW SOD80 |
More Detail: | Zener Diode 6.5V 500mW ±3% Surface Mount SOD-80 |
DataSheet: | FLZ6V8A Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Voltage - Zener (Nom) (Vz): | 6.5V |
Tolerance: | ±3% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 6.6 Ohms |
Current - Reverse Leakage @ Vr: | 1.1µA @ 3.5V |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 200mA |
Operating Temperature: | -65°C ~ 175°C |
Mounting Type: | Surface Mount |
Package / Case: | DO-213AC, MINI-MELF, SOD-80 |
Supplier Device Package: | SOD-80 |
Base Part Number: | FLZ6V8 |
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Diodes are an essential and versatile component found in almost all electronic circuits. The versatility of a diode is derived from its ability to act as both a switch and a voltage regulator. The FLZ6V8A is a single Zener diode that combines the features of a regular diode and a zener diode, making it very useful for applications that require both.
This diode is encased in a DO-35 package and carries a Maximum Reverse Stand off Voltage of 6.2V. Its maximum Continuous Power Dissipation is 500 milliwatts and it has a maximum Forward Voltage of .95V. With a Current Reverse Leakage of 1 microampere it is suitable for a variety of applications including clamping circuits and voltage regulation.
It is also suitable for applications that require ESD protection, such as computers, cell phones and consumer electronics, as well as transistors, transducers and motors. With an insulation resistance of 1000 megaohms and a reverse recovery time of 200 nano-seconds, it can be used in a wide range of applications.
The FLZ6V8A diode\'s working principle is based on the P-N junction. This junction is formed when two semiconductor materials, one of N-type and one of P-type, are joined together to form a diode. The P-N junction acts as a barrier to the passage of electrons. When a positive voltage is applied to the diode, it allows current to flow through, while a negative voltage blocks the current.
In the application of zener diodes, the junction between two P-N semiconductor layers is known as a "zener junction". This junction has a unique property: when a reverse bias voltage is applied, the junction will start to break down, resulting in a controlled amount of current flowing through the junction. This current is the Zener current, and helps to regulate the voltage across the diode.
The FLZ6V8A diode can be used in a variety of applications that require voltage regulation. It is used in clamping circuits, where it helps to protect sensitive components from voltage spikes. It can also be used to regulate the current through a transistor or other devices.
The FLZ6V8A diode is an invaluable component in a wide range of applications, and its working principle is simple to understand and easy to apply. Its versatility and reliability makes it suitable for a variety of projects.
The specific data is subject to PDF, and the above content is for reference
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