FM24CL64B-GATR

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Base Part Number:	FM24CL64
Supplier Device Package:	8-SOIC
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 125°C (TA)
Voltage - Supply:	2.7 V ~ 3.6 V
Memory Interface:	I²C
Access Time:	550ns
Series:	F-RAM™
Clock Frequency:	1MHz
Memory Size:	64Kb (8K x 8)
Technology:	FRAM (Ferroelectric RAM)
Memory Format:	FRAM
Memory Type:	Non-Volatile
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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Introduction of FM24CL64B-GATR Memory

FM24CL64B-GATR is a type of serial FRAM (ferroelectric random access memory) developed by Future Electronics. It is one of the first product in the Memory series of Future Electronics company, which offers the advantages of FRAM technology at the price of traditional EEPROMs. Its non-volatility of data, combined with its burst read and write capability, make FM24CL64B-GATR suitable for many applications. Moreover, the device comes in an 8-pin, 8-pad UDFN package, which is smaller than traditional EEPROM packages.

Application Field of FM24CL64B-GATR

The FM24CL64B-GATR memory is a high density memory module, ideal for applications where data storage needs to be fast, secure and reliable. It is usually used in embedded systems and applications which require quick and reliable access to data, such as automotive, industrial, medical and consumer electronics.Because of its non-volatility, FRAM technology provides great features to improve the overall performance in these applications. For example, in automotive applications, FM24CL64B-GATR can be used to save data in an electronic control unit, such as parameters of the internal combustion engine, speed and time data. In industrial applications, FM24CL64B-GATR can be used to store calibration data, test results and settings in machines and robotic arms.

Working Principle of FM24CL64B-GATR

The FM24CL64B-GATR memory module utilizes the ferroelectric non-volatile random access memory technology, which enables it to store data without the need for a power source. It consists of an array of ferroelectric capacitors, which are isolated from an unselected cell by a diaphragm layer.When a program or write request is issued, a voltage is applied to the capacitor, creating a polarization effect. This polarization effect causes a deceleration of the voltage, which changes the data stored in the memory cell. As the cell is isolated, the polarization remains and the data is retained.To read data from the memory cell, the charge on the capacitor is measured. As the voltage is proportional to the amount of charge stored, the data can be read without any power consumption.

Conclusion

The FM24CL64B-GATR is a memory module developed by Future Electronics for embedded and consumer applications. Its non-volatile information storage and high density per size makes it suitable for applications which require quick and reliable access to data. The ferroelectric non-volatile random access memory technology enables FM24CL64B-GATR to store data without a power source, and maintain data integrity even during power interruptions.

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