| Allicdata Part #: | FMD80-0045PS-ND |
| Manufacturer Part#: |
FMD80-0045PS |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 55V 150A I4-PAC-5 |
| More Detail: | N-Channel 55V 150A (Tc) Through Hole ISOPLUS i4-P... |
| DataSheet: |  FMD80-0045PS Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4V @ 1mA |
| Package / Case: | i4-Pac™-5 |
| Supplier Device Package: | ISOPLUS i4-PAC™ |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | -- |
| FET Feature: | -- |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 86nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 4.9 mOhm @ 110A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 150A (Tc) |
| Drain to Source Voltage (Vdss): | 55V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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The FMD80-0045PS PowerMOS transistor is a high-voltage FET (field-effect transistor) with a wide range of applications. This type of transistor was developed by the company Infineon Technologies in order to provide the industry with a high-performance and reliable FET-style transistor that can be used in areas with high voltage ranges.A FET (field-effect transistor) is a device with three terminals (source, gate, and drain) that is used to amplify or switch electrical signals, allowing it to be used as a power amplifier or a switch. In the case of the FMD80-0045PS, it is intended to be used as a power amplifier. It is capable of handling voltages up to 1000V and currents up to 100A. It is well-suited to applications in automotive, consumer, industrial, and communications sectors.The basic principle of operation of the FMD80-0045PS involves an electric field produced between the source and drain, with the gate terminal controlling the field and thus the current flow through the FET. The voltage applied to the gate terminal determines the amount of current that is allowed to flow through the FET. If a potential difference is applied between the source and the drain, the FET can be used as a switch, with the gate voltage determining whether or not the FET is conductive.The FMD80-0045PS is specifically designed to deal with high-current applications. It has a very low on-resistance of 4.5mΩ, meaning that the voltage drop across it is reduced at higher current levels. This makes the device more efficient, allowing more current to pass with less power loss.The FMD80-0045PS can handle high voltage levels up to 1000V and current levels up to 100A. This makes it ideal for power amplifier applications in automotive, consumer, industrial, and communication systems. The device is designed to be very reliable and is designed to meet stringent safety regulations. The FMD80-0045PS is also available in a variety of packages, allowing it to be used in different applications.The FMD80-0045PS is a high-performance, high-voltage FET that can be used in many different applications. It is designed to be highly efficient and reliable, and is able to handle very high voltage and current levels. It is well suited to automotive, consumer, industrial, and communication systems where high-performance power amplification is required.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| FMD80-0045PS | IXYS | 0.0 $ | 1000 | MOSFET N-CH 55V 150A I4-P... |
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