FMMT593TC Allicdata Electronics
Allicdata Part #:

FMMT593TCDITR-ND

Manufacturer Part#:

FMMT593TC

Price: $ 0.09
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PNP 100V 1A SOT23-3
More Detail: Bipolar (BJT) Transistor PNP 100V 1A 50MHz 500mW S...
DataSheet: FMMT593TC datasheetFMMT593TC Datasheet/PDF
Quantity: 10000
10000 +: $ 0.08039
30000 +: $ 0.07374
Stock 10000Can Ship Immediately
$ 0.09
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Power - Max: 500mW
Frequency - Transition: 50MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Base Part Number: FMMT593
Description

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The FMMT593TC is a small signal transistor, belonging to the bipolar junction transistors (BJT) family. It is a small signal NPN device, meaning that it takes electrical current or signal from the base and amplifies it enough to obtain an output current from the Collector. This device is commonly used in a wide range of applications from switching circuits to small signal amplification.

Let\'s take a look at some of the applications of the FMMT593TC, which includes the following:

  • Motor control
  • Gate driver circuits
  • Telecommunications
  • Switching applications
  • Automotive electronics
  • Audio amplifier circuits
  • Discrete applications, such as logic circuits

The working principle of the FMMT593TC is based on its electrical characteristics, which includes the current amplification factor (hFE), the vice current amplification factor (hEu), and the output impedance (Ro). These electrical characteristics determine the way the transistor works, and how it can be used in order to achieve specific tasks.

The hFE of the FMMT593TC is a measure of its current gain, meaning that it is the ratio of the collector current in relation to the base current. This parameter is especially important when designing switching circuits, since it will determine the amount of electrical current that will flow through the device. The hEu is the vice current gain, which is a measure of the emitter current in relation to the collector current. This parameter is also important when designing logic gates, since it will determine the amount of electrical current that will flow through the gates. Finally, the Ro of the FMMT593TC is a measure of its output impedance, which is the resistance that is measured between its collector and emitter terminals when it is in active mode. This parameter is important for designing audio amplifier circuits, since it will determine the amount of power that can be dissipated by the device.

In conclusion, the FMMT593TC is a small signal NPN transistor that is used in a wide range of applications from motor control to switching circuits. Its electrical characteristics of hFE, hEu, and Ro determine its working principle, which is based on its ability to take electrical current or signals from the base and amplify them enough to obtain an output current from the collector. This device can be used for a number of purposes, such as motor control, gate driver circuits, telecommunications, switching applications, automotive electronics, audio amplifiers, and discrete applications.

The specific data is subject to PDF, and the above content is for reference

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