FP35R12KT4B11BOSA1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

FP35R12KT4B11BOSA1 Application Field and Working Principle

The FP35R12KT4B11BOSA1 model is an insulated-gate bipolar transistor (IGBT) module. This device is specifically designed to meet high current and high speed switching application needs. It features a robust and reliable design, which makes it suitable for the most demanding applications.

Summary:

The FP35R12KT4B11BOSA1 is an IGBT module designed for high current and high speed switching applications. It features a robust and reliable design, and is suitable for the most demanding applications.

Features:

• Maximum DC Collector Current: 35A
• Maximum Collector-Emitter Voltage: 1200V
• Minimum Collector-Emitter Saturation Voltage: 11V
• Optimized Electrical Stress Distribution
• Standard Power Loss Modules with reduced weight and volume
• Low Conduction Losses and Lower Switching Losses with High Efficiency
• High Switching Frequency at High Temperatures

Application Field

The FP35R12KT4B11BOSA1 IGBT module is suitable for all types of switching applications that require high current, high speed switching performance. This module is widely used in various applications such as D.C. power supplies, motor control systems, inverters, welding machines, etc.

This device is particularly well suited for applications that involve high current support and vary widely in load conditions. The standard conduction and switching losses make this module an excellent choice for applications where speed and current are critical.

Working Principle

The IGBT module works on a principle similar to the one behind the power transistor, but has a more advanced integration of both bipolar and field effect transistor elements. This reduces the overall complexity of the device, while at the same time allowing for higher power ratings and improved electrical performance.

The device is rated for 1200V collector-emitter voltages and provides 35A of collector current. When operated as an open-drain configuration, the collector-emitter voltage can be varied with the application of a control signal. The device exhibits extremely low on-state losses, fast switching speed and low gate drive power requirements.

In a simplified explanation, the IGBT module uses an external gate voltage to create a conductive path between the collector and emitter. When the gate voltage is applied, the switching element switches from an off-state to an on-state, allowing current to flow from the collector to the emitter. Once the external gate voltage is removed, the device switches off and the collector current is blocked.

Conclusion

The FP35R12KT4B11BOSA1 IGBT module is an excellent power switching device for various high current, high speed applications. This device utilizes an advanced integration of bipolar and field effect transistor elements, allowing for higher power ratings and improved electrical performance. This device can handle 1200V Collector-Emitter Voltages and provide 35A of Collector Current.

The specific data is subject to PDF, and the above content is for reference