FPN560A_D75Z

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

FPN560A_D75Z belongs to a category of transistors known as Bipolar Junction Transistors (BJT). Specifically, FPN560A_D75Z falls within the sub-category of Single BJT transistors. Single BJT transistors are components that control electric current through two, rather than three semiconductor layers that enable current flow.

FPN560A_D75Z is an NPN device. NPN transistors are components that use an emitter-base junction to control the electrical current which has been input into the circuit. The electrical current is then allowed to flow through the NPN transistor’s collector-base junction, allowing current to be output into the circuit. Typically, single NPN transistors are used when amplification or switching is required.

The FPN560A_D75Z is a low voltage and low power device, designed for use in mobile telephones and other applications that require electronic devices with small size, high speed, and low power consumption. It is suitable for use in circuits such as amplifiers, ringers, timers, DC-DC converters, switching circuits, and touch screens.

The FPN560A_D75Z utilizes a PNP collector and an NPN e-base to provide the essential power and speed performance. In order to limit the electrical current flowing through the device, base resistors are incorporated in the circuit. The base resistors are utilized to form Darlington pairs with the NPN transistors to allow the current to be controlled at two levels, resulting in improved efficiencies.

The FPN560A_D75Z also has a wide operating voltage of 4.0V to 12V which makes it suitable for use in any application. The maximum collector current allowed in the FPN560A_D75Z is 3.9A, while the maximum collector-emitter voltage allowed is 40V. The transition frequency of the device is between 50MHz and 600MHz, allowing for rapid switching between active and inactive states.

The FPN560A_D75Z has a hFE rating between 10 and 50, which is relatively high for this type of device. The hFE rating provides an indication of the device’s linearity. The higher the rating, the more linear the device will be when operating at voltages less than the specified maximum. This makes the FPN560A_D75Z suitable for applications where linearity is essential, such as audio output stages.

Furthermore, the FPN560A_D75Z has a very low saturation voltage of 0.2V. This allows the device to operate at voltages very close to the supply voltage, thus increasing its efficiency. Additionally, the device has a high breakdown voltage of 150V, meaning it can withstand high potentials without damage.

In summary, the FPN560A_D75Z is a single NPN BJT transistor, suitable for use in many modern electronic devices, notably those used in mobile telephones. This transistor is capable of amplifying and switching currents over a wide operating voltage range, catering for both low-voltage and high-voltage applications. With its high linearity, low saturation voltage, and high breakdown voltage, the FPN560A_D75Z is an ideal transistor for many applications.

The specific data is subject to PDF, and the above content is for reference