Allicdata Part #: | FQA36P15_F109-ND |
Manufacturer Part#: |
FQA36P15_F109 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 150V 36A TO-3P |
More Detail: | P-Channel 150V 36A (Tc) 294W (Tc) Through Hole TO-... |
DataSheet: | FQA36P15_F109 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | QFET® |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 150V |
Current - Continuous Drain (Id) @ 25°C: | 36A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 90 mOhm @ 18A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 105nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 3320pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 294W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-3PN |
Package / Case: | TO-3P-3, SC-65-3 |
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The FQA36P15_F109 are single gate complementary Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) that are designed to operate in low voltages. This MOSFET has been designed for use in switching, level translation, and logic level shifting applications. The FQA36P15_F09 series is designed to operate with a maximum voltage of 30 volts and with a low on-resistance of 15Ω.
The FQA36P15_F109 are N-channel MOSFETs, which have an extended drain-source breakdown voltage rating of 35 volts, providing enhanced reliability under overloaded conditions. Additionally, these FQA36P15_F109 feature ultra-low gate charges, making them an ideal choice for power-efficient designs. With their enhanced features, these MOSFETs offer improved performance levels over conventional MOSFETs.
The FQA36P15_F109 use a metal-insulator-semiconductor (MIS) structure to provide high-speed switching, making them suitable for a wide range of conditions. By utilizing the MIS structure, these FQA36P15_F109 MOSFETs can quickly switch between on and off states, thus allowing for greatly improved response times. Additionally, these MOSFETs also incorporate advanced design techniques that significantly reduce their power consumption.
In terms of operation, the FQA36P15_F109 are voltage-controlled devices that are activated by a small DC voltage. This voltage—called the gate-source voltage—acts as a switch that triggers the flow of current between the MOSFET’s drain and source. When the gate-source voltage is low, current will not flow, and the MOSFET will remain in the off state. When the gate-source voltage is increased above a certain threshold—called the threshold voltage—the MOSFET will turn on, allowing the current to flow.
The FQA36P15_F109 are widely used in applications including regulating power flow, providing voltage and current regulation, boosting efficiency, and protecting against short circuits and overloads. These MOSFETs are also used in a variety of power switching, voltage conversion, and current control applications, making them an ideal choice for a variety of applications. With their remarkable efficiency and high switching speeds, the FQA36P15_F109 are the perfect choice for designers looking for reliable and effective solutions.
The specific data is subject to PDF, and the above content is for reference
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