Allicdata Part #: | FQD3N40TF-ND |
Manufacturer Part#: |
FQD3N40TF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 400V 2A DPAK |
More Detail: | N-Channel 400V 2A (Tc) 2.5W (Ta), 30W (Tc) Surface... |
DataSheet: | FQD3N40TF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 30W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 230pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 7.5nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 3.4 Ohm @ 1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2A (Tc) |
Drain to Source Voltage (Vdss): | 400V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The FQD3N40TF, also known as a N-channel 400V, is a type of power MOSFET (metal–oxide–semiconductor field-effect transistor). The FQD3N40TF is mainly used in various applications, including power switching, power conversion, motor control and low voltage circuits. MOSFETs, an important type of analog field-effect transistor (FET), are electronic devices used as amplifiers and switches for signals. They are mainly used in applications where very small amounts of current are required. This makes their ideal for use in audio amplification and power conversion.
The FQD3N40TF MOSFET is a n-channel device, which is combined with a p-channel gate connection. This device has a drain-source breakdown voltage of 400V, which makes it suitable for switching high voltage signals. In addition, its high maximum drain current of 55 amps makes it suitable for most power switching and power conversion applications.
This MOSFET works on the principle of depletion-mode transistor technology. In order to use this device, the gate-source voltage must be at least 5 volts higher than the source-drain voltage. When the gate-source voltage increases, the device starts to conduct current, which is known as turn-on voltage. Conversely, when the gate-source voltage drops, the current stops flowing, known as turn-off voltage. This device does not affect the input signal, since it does not draw any current from the input.
The FQD3N40TF has a drain-source capacitance of 40 pF, a gate charge of 14 nC, and a maximum power dissipation of 3 watts. It also has a total gate charge of 39 nC and an avalanche energy of 135 mJ. This makes it suitable for applications that require high speed switching and noise immunity. It also has an operating temperature range of -55°C to 175°C.
The FQD3N40TF is used in various applications such as personal computers, power tools, white goods, and appliances. It is also used as a switch in various applications such as automotive electronics, audio amplifiers, and power supplies. Additionally, it is widely used in home applications, industrial equipment, and other consumer electronics. It can also be used in telecommunication systems, including remote video systems and voice over internet protocol services.
In summary, the FQD3N40TF is a power MOSFET device with an n-channel connection and a drain-source breakdown voltage of 400V. This makes it suitable for highly reliable applications, such as power switching and power conversion. It is widely used in various applications and industries, including personal computers, power tools, home applications and industrial equipment. The operating temperature range is -55°C to 175°C and its maximum power dissipation is 3 watts.
The specific data is subject to PDF, and the above content is for reference
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