FQP47P06_SW82049

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The FQP47P06_SW82049 is a type of field-effect transistor, commonly referred to as a MOSFET or metal-oxide-semiconductor FET. The object is a single, monolithically integrated device, meaning it consists of one unified structure that performs all its functions.

The object is a N-channel enhancement-mode MOSFET, which differs from a P-channel model in that it has a lower threshold voltage. It is also readily available to many of the world’s leading microchip makers, with its low on-resistance and other features making it an attractive choice for many applications.

Application fields include many modern electronics items, ranging from computers and smartphones to other consumer-focused devices. This is due to its low on-resistance, which allows current to be easily transferred to other components, while its small size makes it easy to arrange multi-chip systems.

The device’s design employs a single gate, located between source and drain terminals. This gate is covered by an oxide layer, which works to trap electrons and form what is known as an inversion layer. The inversion layer is then used to modulate the flow of current, controlling whether the device is on or off.

To switch the device on, a voltage of at least 4.5V must be applied to the gate. Some models may require a higher voltage level. This increases the electric fields in the inversion layer and creates an additional charge that causes current to flow through the device.

The device will then remain on until the voltage is reduced to zero. Some models may require a smaller voltage to remain on, so it is important to check the manufacturer’s datasheet before use.

The FQP47P06_SW82049 is often used as an amplifier or switch in many types of electronics. Its small size, low on-resistance, and high current capabilities make it a valuable device in many applications. Its efficiency and reliability also make it suitable for use in applications with tight power budgets, such as mobile phones and tablets.

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