FT150R12KE3G_B4

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The FT150R12KE3G_B4 is a robust module specifically designed for use in high-power applications. It is an insulated-gate bipolar transistor (IGBT) module designed for operation up to 1500 volts with high peak operating capability. The device features an integrated infrastructure that minimizes package parasitics and reduces thermal resistance.

The FT150R12KE3G_B4 module provides an ideal solution for a wide range of power applications and offers reliable operation and robust performance. It is suitable for use in high-power and high-current applications such as welding, solar power generation, uninterruptible power supplies, traction drives and industrial motor control. The device provides superior switching performance compared to conventional silicon bipolar transistors and comes with several protection features to ensure safe and reliable operation.

The FT150R12KE3G_B4 module consists of a silicon IGBT, a series-connected diode and a thermistor. The IGBT is a four layer, vertical conduction transistor, designed for operation up to 1500 volts. It features an insulated gate structure that provides excellent switching performance and low on-state losses. The integrated diode is a reverse conduction power controllable Schottky diode capable of handling large transient currents. The integral thermistor is used to monitor the module\'s temperature and has excellent temperature drift characteristics. It is housed in a compact module with an integrated heatsink and metal baseplate that provides excellent heat dissipation.

The FT150R12KE3G_B4 module operates with a high collector-emitter voltage rating of 1500 volts and a collector current rating of up to 385 amperes. It also has a peak collector-emitter voltage rating of 2000 volts and a peak collector current rating of up to 190 amperes. The device features excellent switching characteristics and offers a low turn-on and turn-off time, a low forward voltage drop and a high speed of operation. The integrated features of the device allow for a high power density and a high efficiency. In addition, the device is designed for use in a wide range of ambient temperature operating conditions.

The FT150R12KE3G_B4 module is designed to provide reliable operation in demanding applications. It features an high surge capability and an integrated protection against overvoltage and overcurrent. The device is constructed using advanced fabrication techniques that ensure rugged performance and reliable operation in extreme environmental conditions. Additionally, it is designed with a high energy efficiency and high power density to provide superior performance in high power applications.

The FT150R12KE3G_B4 module is a versatile IGBT module designed for use in a wide variety of applications. Its features, performance and capabilities make it an ideal solution for high-power applications. The device provides reliable operation and robust performance. It comes with several protection features to ensure safe and dependable operation. The module has an impressive switching capability and exceptional temperature resistance, making it suitable for use in extreme environmental conditions. The FT150R12KE3G_B4 module is an excellent choice for use in high-power applications.

The specific data is subject to PDF, and the above content is for reference