FZT757TA Discrete Semiconductor Products |
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Allicdata Part #: | FZT757TR-ND |
Manufacturer Part#: |
FZT757TA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PNP 300V 0.5A SOT-223 |
More Detail: | Bipolar (BJT) Transistor PNP 300V 500mA 30MHz 2W S... |
DataSheet: | FZT757TA Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 300V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 100mA, 5V |
Power - Max: | 2W |
Frequency - Transition: | 30MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Base Part Number: | FZT757 |
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The FZT757TA is a type of bipolar junction transistor (BJT) that has a single base connection, making it an excellent choice for a variety of electronic applications. Its low Vce(sat) ensures efficient operation and fast switching times, while its high current gain allows for high electrical output. The FZT757TA is an ideal choice for switching, amplification, as well as voltage or current amplification.
In order to understand how this transistor works, it is helpful to understand two key concepts: junction formation and collectors-emitters current flow. The junction formation determines which type of transistor is formed. When electrons from the base attach to the collector and a small number of positive charges from the collector attach to the base, a PNP bipolar junction transistor is formed. Conversely, when electrons from the base attach to the emitter and a smaller number of positive charges from the emitter attach to the base, an NPN bipolar junction transistor is formed. This is exactly how the FZT757TA is formed.
Once the PNP or NPN type has been established, collectors-emitter current flow is responsible for the operation of the device. In short, an electric current takes a particular path through the transistor if there is a voltage applied at the base and the collector and emitter. In the case of the FZT757TA, the applied voltage to the base controls the amount of current that is able to flow from the collector to the emitter and vice versa. In this way, the transistor functions as a sort of switch, allowing the current to flow through the device or block it, depending on the voltage applied to the base.
The FZT757TA is well suited for use in power applications such as power amplifiers, voltage multipliers, as well as motor-drive circuits. Its low Vce(sat) makes it ideal for switching applications, while its high current gain and low noise characteristics allow it to be used in amplification, buffering, and voltage or current regulation. It is also a popular choice for use in other circuits, such as charging circuits, solarpanel monitoring circuits, switching supplies, and more.
In summary, the FZT757TA is a type of single, bipolar junction transistor that is suitable for a variety of different applications, such as amplification and power applications. The application of base voltage to the device determines its function. Its low Vce(sat), high current gain, and low noise characteristics make it an ideal choice for a variety of projects.
The specific data is subject to PDF, and the above content is for reference
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