GA50JT12-247

Series:	--
Packaging:	Tube
Part Status:	Active
FET Type:	--
Technology:	SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss):	1200V
Current - Continuous Drain (Id) @ 25°C:	100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	--
Rds On (Max) @ Id, Vgs:	25 mOhm @ 50A
Vgs(th) (Max) @ Id:	--
Vgs (Max):	--
Input Capacitance (Ciss) (Max) @ Vds:	7209pF @ 800V
FET Feature:	--
Power Dissipation (Max):	583W (Tc)
Operating Temperature:	175°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-247AB
Package / Case:	TO-247-3

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GA50JT12-247 Application Field and Working Principle

The GA50JT12-247 is a high-voltage, super-junction transistor with a wide range of applications. It is a common output device used in motor control and power converter applications. This article will explore the application field and working principle of the GA50JT12-247.

Application Field

The GA50JT12-247 is widely used in electronic systems as it has high current, low resistance and low gate charge. It has excellent parasitic immunity and thermal performance, making it suitable for power converter applications. The device facilitates the easy realization of high efficiency single-stage power conversion systems with high frequency, due to its best-in-class transient response, frequency range, and fast body diode recovery characteristics.The device is also suitable for DCDC converters under high power and high temperature conditions, as well as high input voltage applications. Its low on-state resistance and gate charge further adds to its versatility for these applications.The device is also suitable for applications such as lighting, printers, and smart metering.

Working Principle

The GA50JT12-247 is a high-voltage super-junction metal–oxide–semiconductor field-effect transistor (MOSFET) device. It works based on the principle of field-effect where an electric field is used to modify the electrical characteristics of the device. In a MOSFET, the electric field is a result of the combined effect of a gate voltage, drain voltage and source voltage. The gate voltage is used to control the current between the source and the drain. As the gate voltage goes up, the resistance between the source and the drain goes down, allowing current to flow. The GA50JT12-247 device is composed of two components: the MOSFET and the body diode. The MOSFET is the main switching device, controlling the current flow between the drain and the source. The body diode is the secondary path for current flow. The maximum drain-source breakdown voltage of the device enables it to operate even at high input voltage applications. The device also has low gate charge, reducing the switching losses and increasing the efficiency of the power conversion system. Additionally, the device has high avalanche ruggedness and is ESD protected, enabling it to be used in applications with high electromagnetic interference (EMI).

Conclusion

The GA50JT12-247 is a high-voltage, super-junction transistor with a wide range of applications. Its excellent thermal performance and low on-state resistance make it suitable for commercial, industrial and automotive applications. Its high drain-source breakdown voltage enables it to operate even at high input voltage applications. It has low gate charge which reduces the switching losses and increases the efficiency of the power conversion system. Additionally, it has high avalanche ruggedness and is ESD protected.

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