GDZ11B-HE3-18 Allicdata Electronics
Allicdata Part #:

GDZ11B-HE3-18-ND

Manufacturer Part#:

GDZ11B-HE3-18

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ZENER 11V 200MW SOD323
More Detail: Zener Diode 11V 200mW ±4% Surface Mount SOD-323
DataSheet: GDZ11B-HE3-18 datasheetGDZ11B-HE3-18 Datasheet/PDF
Quantity: 1000
10000 +: $ 0.02362
Stock 1000Can Ship Immediately
$ 0.03
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 11V
Tolerance: ±4%
Power - Max: 200mW
Impedance (Max) (Zzt): 30 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 8V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Description

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The GDZ11B-HE3-18 is a single zener diode that belongs to a product range of super-small zener diodes developed and produced by manufacturer Unisonic Technologies. A zener diode is designed to operate at reverse bias, meaning that it is used to establish a reverse voltage across its electrodes. When exposed to a reverse voltage of a certain threshold, the zener diode begins to conduct current. The GDZ11B-HE3-18 has this threshold or “zener voltage” of 18V, and a power handling capability of 500mW. This zener diode is unique in that it is very small, with a diameter of 0.6mm and a maximum height of 0.25mm. This combination of small size and high power handling make the GDZ11B-HE3-18 suitable for use in applications with space constraints, as well as high power applications. Some of the most common applications of this diode are in automotive applications, such as lighting and audio systems, as well as personal electronics, such as cell phones and other mobile devices. The working principle of a zener diode is that when it is connected in reverse bias, the electric field within the diode increases, because it is connected to a higher potential at the anode than the cathode. This intense electric field then causes electrons to be knocked off the surface of the anode. These electrons travel through the junction and into the region near the cathode, creating a space charge that also acts to draw holes from the cathode to the anode. This extra charge then helps to increase the overall current flow through the diode. At the same time, the increased negative potential of the electric field near the anode causes the electric potential there to become negative, and the potential at the cathode to become positive. This maintains a constant electric field across the junction, and allows the current to remain constant and controlled. The amount of current being conducted is known as the “zener voltage”, which is determined by the junction width and doping levels of the diode. The GDZ11B-HE3-18 has a zener voltage of 18V and can handle up to 500mW of power.Finally, the diode also has a built-in “zener breakdown” feature, which helps to protect it from short circuits or other excessive current flow. This occurs when the junction voltage reaches its threshold, or “zener voltage”, which causes a sudden surge in current across the junction, allowing the diode to safely dissipate the excess current and protect itself from damage.In summary, the GDZ11B-HE3-18 is super-small zener diode that has a zener voltage of 18V and a power handling capability of 500mW. This makes it suitable for use in small-scale and high-power applications such as automotive, lighting and audio systems, and personal electronics. It has a built-in zener breakdown feature to protect the diode from short circuits or other current overloads, and it works by establishing a constant electric field across the junction to create a precise and controlled flow of current.

The specific data is subject to PDF, and the above content is for reference

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