Allicdata Part #: | GL41D-E3/97-ND |
Manufacturer Part#: |
GL41D-E3/97 |
Price: | $ 0.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 200V 1A DO213AB |
More Detail: | Diode Standard 200V 1A Surface Mount DO-213AB |
DataSheet: | GL41D-E3/97 Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.06034 |
Series: | SUPERECTIFIER® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 1A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 10µA @ 200V |
Capacitance @ Vr, F: | 8pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-213AB, MELF (Glass) |
Supplier Device Package: | DO-213AB |
Operating Temperature - Junction: | -65°C ~ 175°C |
Base Part Number: | GL41D |
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Diodes - Rectifiers - Single - GL41D-E3/97 Application Field and Working Principle
A GL41D-E3/97 rectifier diode is a type of diode that is commonly used for various power electronics applications. It is an epitaxial, single–phase rectifier diode that is able to operate efficiently with higher current ratings, forward voltages and recurrence frequencies. This makes them an ideal choice for engineering and industrial applications.
This rectifier diode is designed to provide efficient, low-loss power rectification during the conversion process of power devices. These diodes have superior reverse recovery characteristics, excellent thermal performance and low diode voltage losses. Applications can include bridgeless rectifier circuits, active clamped rectifiers, synchronous rectification, as well as dc-dc converters, inversion circuits, and other high-current power conversion applications.
Working Principle
The GL41D-E3/97 rectifier diode works by allowing an electric current to flow in only one direction. This is achieved with a p–n junction, which consists of two materials with different chemical makeup that are joined together. When an electric current is applied, the semiconductor material enabled on the other side of the p–n junction allows current to move in only one direction. This is why it is called a rectifier diode.
The two terminals of a rectifier diode are known as the anode and the cathode. The anode is the positive terminal and the cathode is the negative terminal. When current passes from the anode to the cathode, it is referred to as forward conduction. When current passes from the cathode to the anode, it is referred to as reverse conduction. This is why the rectifier diode is also known as a one-way valve.
The GL41D-E3/97 rectifier diode is designed so that its anode has a negative potential compared to its cathode. This enables it to stop reverse voltages from flowing. Furthermore, the diode also features a reverse recovery time to prevent short-circuits caused by high currents flowing in the reverse direction.
Advantages
The GL41D-E3/97 rectifier is capable of efficient power rectification and low voltage drops, making it more reliable than other diodes on the market. It also has a low reverse recovery time, a low forward turn-on voltage and a high peak repetitive reverse voltage, which make it suitable for high-power applications. Additionally, this rectifier diode has a low forward voltage drop and a high temperature coefficient, making it ideal for power conversion applications.
Limitations
The GL41D-E3/97 rectifier diode has a few limitations. Firstly, it is not suitable for low-voltage applications due to its high forward voltage drop. Secondly, it can be prone to thermal runaway if operated for extended periods at higher current ratings. Lastly, the diode is more susceptible to failure when exposed to higher temperatures, due to its high temperature coefficient.
Conclusion
The GL41D-E3/97 rectifier diode is a type of diode that is designed to provide efficient power rectification. It features a low forward voltage drop and a high temperature coefficient, making it suitable for high-power applications. Additionally, it has a low reverse recovery time and a high peak repetitive reverse voltage. However, it is not suitable for low-voltage applications due to its high forward voltage drop, and it can be prone to thermal runaway if operated for extended periods at higher current ratings.
The specific data is subject to PDF, and the above content is for reference
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GL41M-E3/96 | Vishay Semic... | -- | 34500 | DIODE GEN PURP 1KV 1A DO2... |
GL41A-E3/96 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 50V 1A DO2... |
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GL41A-E3/97 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
GL41Y-E3/96 | Vishay Semic... | -- | 7500 | DIODE GEN PURP 1.6KV 1A D... |
GL41A/54 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
GL41D/54 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
GL41M/54 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
GL41B-E3/97 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
GL41D-E3/97 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
GL41G-E3/97 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
GL41J-E3/97 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
GL41K-E3/97 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
GL41M-E3/97 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 1KV 1A DO2... |
GL41T-E3/97 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 1.3KV 1A D... |
GL41Y/1 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 1.6KV 1A D... |
GL41K-E3/96 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
GL41T-E3/96 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 1.3KV 1A D... |
GL41B-E3/96 | Vishay Semic... | 0.08 $ | 6000 | DIODE GEN PURP 100V 1A DO... |
GL41J/1 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
GL41B/54 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
GL41G/54 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
GL41AHE3/97 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
GL41BHE3/97 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
GL41DHE3/97 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
GL41GHE3/97 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
GL41JHE3/97 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
GL41KHE3/97 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
GL41MHE3/97 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
GL41THE3/97 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 1.3KV 1A D... |
GL41YHE3/97 | Vishay Semic... | 0.11 $ | 1000 | DIODE GEN PURP 1.6KV 1A D... |
GL41AHE3/96 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
GL41BHE3/96 | Vishay Semic... | 0.12 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
GL41DHE3/96 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
GL41GHE3/96 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
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