GP1M015A050H

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	231W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2263pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	39nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	440 mOhm @ 7A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	14A (Tc)
Drain to Source Voltage (Vdss):	500V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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GP1M015A050H is a type of Field-Effect Transistor (FET), which belongs to the category of single MOSFETs. It is an ideal solution for applications that require a low cost and compact device. This device is also suitable for both digital and analog circuits.The GP1M015A050H features low drain source ON resistance, high drain source breakdown voltage, and low gate charge. Additionally, this device offers very low switching losses and improved power dissipation. All these features enable the GP1M015A050H to be highly suitable for switch mode power supplies and high frequency switching applications.The working principle of the GP1M015A050H is based on FETs and MOSFETs technology, which is similar to the operation of other metal oxide semiconductor (MOS) devices. As with a conventional FET, the GP1M015A050H uses a metal gate and two metal source and drain contacts, with the gate being connected to the two metal contacts by two p-doped regions. By applying a positive voltage to the gate contact, the GP1M015A050H will become conductive and a current will flow between the source and drain. This current flow is controlled by the amount of voltage that is applied to the gate contact, thus allowing for precise switching and control.The GP1M015A050H also provides the advantage of low gate charge, compared to other FET devices. Low gate charge allows the device to exhibit a faster switching time and reduced power dissipation. This is made possible through the use of a thin gate oxide, which reduces the delay that is associated with the gate switching process. Additionally, due to the thin gate oxide, the device is capable of operating at higher voltages.In terms of application field, the GP1M015A050H is very suitable for high frequency switching applications, as it is able to maintain stable switching performance at high frequencies. This device can also be used in switch mode power supplies and motor control circuits, as the device is able to rapidly switch on and off with minimal power loss. Furthermore, the device is able to reduce switching losses and improve overall power dissipation.The GP1M015A050H is a reliable and cost-effective device that can be used to control current flows in a variety of circuits, from switch mode power supplies to motor control circuits. It provides a low cost and compact solution, with reduced gate charge and fast switching performance. Additionally, the device is able to minimize switching losses and improve overall power dissipation. All these features make the GP1M015A050H an ideal choice for a wide range of applications.

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