Allicdata Part #: | GWM220-004P3-SMDSAM-ND |
Manufacturer Part#: |
GWM220-004P3-SMD SAM |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET 6N-CH 40V 180A ISOPLUS |
More Detail: | Mosfet Array 6 N-Channel (3-Phase Bridge) 40V 180A... |
DataSheet: | GWM220-004P3-SMD SAM Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | 6 N-Channel (3-Phase Bridge) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 180A |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 94nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Power - Max: | -- |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 17-SMD, Gull Wing |
Supplier Device Package: | ISOPLUS-DIL™ |
Base Part Number: | GWM220 |
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GWM220-004P3-SMD SAM (Smart Array Matrix) is a type of Field Effect Transistor (FET) that is designed to deliver high performance, precision control and power efficiency. These devices are used in a variety of applications such as automotive, industrial, audio and digital. They can be found in a range of equipment such as radio frequency (RF) transmitters, motion control devices and power supplies; they are becoming increasingly popular in LED and OLED displays. The GWM220-004P3-SMD SAM is designed to be a high-performance, high-efficiency FET for these applications.
The GWM220-004P3-SMD SAM has a unique structure resulting in an array of individually controllable channels. This allows for greater control over the voltage and current of the device\'s application. The FETs are connected in rows and columns, allowing for precise control and power optimization. There are a number of components that make up the GWM220-004P3-SMD SAM including the FETs, diodes, resistors and capacitors. Each component is carefully selected to ensure the maximum performance of the device.
The GWM220-004P3-SMD SAM is designed to operate at very high frequencies, enabling precise control over voltage and current. This enables the GWM220-004P3-SMD SAM to be used in applications where conventional FETs cannot be used. The device also has a low on-resistance, allowing for higher current ratings, higher switching speed and lower noise. The device also has an extended line of temperature range with a maximum junction temperature of 150 degrees Celsius and an operating temperature range of -55 to +150.
The working principle of the GWM220-004P3-SMD SAM is relatively simple. When a voltage is applied to the gate, it creates an electric field which causes the electrons in the semiconductor to move towards the gate. This creates a channel in the semiconductor which allows electric current to flow from the source to the drain. The current is controlled by the voltage applied to the gate, with higher voltages creating a wider gate and allowing more current to flow. This makes the GWM220-004P3-SMD SAM ideal for applications requiring accurate and precise control over voltage and current.
The GWM220-004P3-SMD SAM is a highly versatile and efficient FET, making it suitable for a wide range of applications. The device is well suited to applications such as audio, automotive, industrial and digital. The device also has a wide temperature range, allowing for use in extreme environments. The device is also well suited to applications requiring precision control, such as RF transmitters, motion control devices and power supplies. The GWM220-004P3-SMD SAM is the perfect device for any application requiring high performance, high efficiency and accuracy.
The specific data is subject to PDF, and the above content is for reference
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