HMC413QS16GETR RF/IF and RFID |
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| Allicdata Part #: | HMC413QS16GETR-ND |
| Manufacturer Part#: |
HMC413QS16GETR |
| Price: | $ 0.00 |
| Product Category: | RF/IF and RFID |
| Manufacturer: | Analog Devices Inc. |
| Short Description: | IC PWR AMP 1.6-2.2GHZ 16-QSOP |
| More Detail: | RF Amplifier IC Cellular 1.6GHz ~ 2.2GHz 16-QSOP |
| DataSheet: | HMC413QS16GETR Datasheet/PDF |
| Quantity: | 1000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Frequency: | 1.6GHz ~ 2.2GHz |
| P1dB: | 27dBm |
| Gain: | 23dB |
| Noise Figure: | 5.5dB |
| RF Type: | Cellular |
| Voltage - Supply: | 2.75 V ~ 5 V |
| Current - Supply: | 270mA |
| Test Frequency: | 1.7GHz ~ 2GHz |
| Package / Case: | 16-SSOP (0.154", 3.90mm Width) Exposed Pad |
| Supplier Device Package: | 16-QSOP |
| Base Part Number: | HMC413 |
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RF amplifiers are specialized electronic amplifiers used to amplify electronic signals in the radio frequency (RF) range. They are designed to convert a low power radio-frequency signal into a higher power signal, such that the original signal can be used for a range of applications.
The HMC413QS16GETR is a high-performance gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pre-amplifier which is specifically designed for nearly all frequency-intermediate transmission channels, including in the VSAT, digital satellite broadcasting, and terrestrial digital broadcast applications.
The HMC413QS16GETR is suitable for use in demanding applications such as digital receivers, sophisticated ground stations, wireless communications, and VSAT systems. It features a low-noise figure of 0.85 dB at 256 MHz, an exceptionally wide operating bandwidth of 0.2-18 GHz, and high power gain of 19 to 20 dB across the operating band. The HMC413QS16GETR offers exceptional thermal performance and all-around high reliability and ruggedness.
The HMC413QS16GETR also offers a wide range of attractive features, including: low noise, wide frequency range, low distortion, and high linearity. It is capable of operating at higher frequencies, with a typical breakdown voltage of 16 V and a maximum operating load impedance of 400 Ohms. Its maximum operating voltage is +20 V and the associated power dissipation is 100 mW. The chip is powered by a 5 volts DC supply rail and its low harmonic distortion allows excellent discrimination of signals in the presence of noise.
The working principle of the HMC413QS16GETR can be summarized as follows. When the external signal is applied to the device, the input metallic gate retains the voltage signal while the built-in gain stage amplifies it. The amplified signal is then applied to the output and the negative feedback network attenuates the voltage gain to ensure low-noise operation. The chip exhibits high linearity and low noise figure when used in receivers. It can be used as a line amplifier or as an impedance matching network.
In conclusion, the HMC413QS16GETR RF amplifier is a versatile device, suitable for a wide range of demanding applications including digital receivers, sophisticated ground stations, wireless communications, and VSAT systems. It offers excellent thermal performance, wide operating bandwidth, and high power gain. This amplifier is also highly reliable and rugged, making it suitable for all types of professional and commercial applications.
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HMC413QS16GETR Datasheet/PDF