HMC459-SX

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RF amplifiers are essential for increasing the power of radio frequency signals. A major component of an RF amplifier is the HMC459-SX amplifier. This amplification solution is designed for low noise, high linearity in an L-Band signal path and provides 11 dB of gain and greater than 25 dBm of output power. It is an ideal solution for a variety of communications applications including point-to-point link, satellite communications and broadcast.

The HMC459-SX is a two-stage gain block with the lowest noise figure and highest linearity performance in its class. The LNA stage has an IP3 of 30 dBm and is designed to operate with a low voltage of 4.1 V while achieving 94% of its 1 dB compression point.

The two-stage gain block of the HMC459-SX allows for adjustable gain of 11 dB at 1 GHz with more gain available at lower frequency and lower voltage. The noise figure is optimized at 1.3 GHz, but can be adjusted to other frequencies to meet specific application requirements. The IP3 range is 30 to 35 dBm with output power up to 25 dBm. Working with a 3.3 or 5 V supply, the minimum noise figure of 1.4 dB gives high immunity to ingress signals for applications requiring ultralow noise levels.

The HMC459-SX is ideal for a broad range of applications including point-to-point link, satcom/broadcast, base stations, and low noise amplifier and variable gain amplifier (VGA) applications. The HMC459-SX is used for high linearity, low noise performance, and a wide range of frequency and power output applications from the DC-3 GHz range. The state-of-the-art GaAs MESFET platforms and Process Design Kits (PDKs) enable superior PAE performance at the amplifier output.

The HMC459-SX amplifier features a two-stage gain block that can be configured for narrowband or broadband applications. The active double-balanced mixer features a high IP1dB rating of 25 dBm and excellent noise figure up to 3 GHz. The amplifier exhibits high linearity and low noise figure performance even at high bias currents. The output power of the amplifier is adjustable from -20 to +25 dBm while maintaining a flatness peak-to-peak of ±1.5 dB with excellent gain accuracy and temperature stability.

The HMC459-SX is designed using the latest gallium arsenide process with 50 ohm matched inputs and outputs. It is fabricated on a lead-free phosphorus doped silicon substrate and is RoHS compliant. An integrated bypass switch is available for a variety of applications and the output power is adjustable from -20 to +25 dBm. The amplifier is also designed with internal ESD protections for greater surge immunity. The HMC459-SX is easy to integrate with external components and power supplies.

The HMC459-SX amplifier is ideal for many applications, including point-to-point link, broadcast, base station, and VGA applications. It features excellent linearity, low noise, and high output power performance, making it ideal for modern wireless communication systems. It is also easy to integrate with other components and is compliant with RoHS standards.

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