HMC636ST89ETR Allicdata Electronics

HMC636ST89ETR RF/IF and RFID

Allicdata Part #:

1127-1063-6-ND

Manufacturer Part#:

HMC636ST89ETR

Price: $ 0.00
Product Category:

RF/IF and RFID

Manufacturer: Analog Devices Inc.
Short Description: IC GAIN BLOCK AMP SOT89
More Detail: RF Amplifier IC General Purpose 200MHz ~ 4GHz SOT-...
DataSheet: HMC636ST89ETR datasheetHMC636ST89ETR Datasheet/PDF
Quantity: 170
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Stock 170Can Ship Immediately
Specifications
Series: --
Packaging: Digi-Reel® 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
Frequency: 200MHz ~ 4GHz
P1dB: 23dBm
Gain: 10dB
Noise Figure: 2dB
RF Type: General Purpose
Voltage - Supply: 5V
Current - Supply: 175mA
Test Frequency: --
Package / Case: TO-243AA
Supplier Device Package: SOT-89
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

RF amplifiers are active electronic devices used to increase the power level of an RF signal. The HMC636ST89ETR is a high-performance gallium arsenide field effect transistor GaAs FET amplifier module from Hittite Microwave Corporation. With an intermediate frequency bandwidth of up to 16GHz and a low noise figure of just 2 dB, the HMC636ST89ETR is well suited to a wide range of applications, including microwave communication systems, radar, test and measurement equipment, and high-speed data systems.

The HMC636ST89ETR\'s specifications make it particularly well suited for mission critical applications, including wireless communication systems, satellite communications, and high speed data links. Its wide-band frequency response is also ideal for applications such as radiometry and phased array radar.

The HMC636ST89ETR uses a two-stage design. The first stage is a single-ended common source stage that provides excellent gain and wide frequency response. The second stage is a balanced, differential amplifier circuit that compensates for any imbalance in the common source stage, resulting in improved linearity and noise reduction. This two-stage design helps to deliver excellent return loss and output power across the frequency range.

The HMC636ST89ETR also features a built-in thermal protection circuit for improved reliability. This protection circuit ensures that the device will shut down if the device temperature exceeds a certain threshold, thus protecting the device from potential damage. Additionally, the HMC636ST89ETR has several built-in features to optimize system performance, including an adjustable bias voltage, an adjustable gate bias, and a matching circuit.

The HMC636ST89ETR provides excellent performance and flexibility for a variety of RF amplifier applications. Its wide frequency bandwidth and low noise figure make it well suited for mission-critical applications such as wireless communication systems and satellite communications. Its wide-band response and adjustable features make it ideal for applications such as radiometry and phased array radar systems. Its built-in thermal protection and adjustable features make it a great choice for high-performance, reliable, and cost-effective designs.

The specific data is subject to PDF, and the above content is for reference

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