HMC636ST89ETR RF/IF and RFID |
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Allicdata Part #: | 1127-1063-6-ND |
Manufacturer Part#: |
HMC636ST89ETR |
Price: | $ 0.00 |
Product Category: | RF/IF and RFID |
Manufacturer: | Analog Devices Inc. |
Short Description: | IC GAIN BLOCK AMP SOT89 |
More Detail: | RF Amplifier IC General Purpose 200MHz ~ 4GHz SOT-... |
DataSheet: | HMC636ST89ETR Datasheet/PDF |
Quantity: | 170 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Series: | -- |
Packaging: | Digi-Reel® |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
Frequency: | 200MHz ~ 4GHz |
P1dB: | 23dBm |
Gain: | 10dB |
Noise Figure: | 2dB |
RF Type: | General Purpose |
Voltage - Supply: | 5V |
Current - Supply: | 175mA |
Test Frequency: | -- |
Package / Case: | TO-243AA |
Supplier Device Package: | SOT-89 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
RF amplifiers are active electronic devices used to increase the power level of an RF signal. The HMC636ST89ETR is a high-performance gallium arsenide field effect transistor GaAs FET amplifier module from Hittite Microwave Corporation. With an intermediate frequency bandwidth of up to 16GHz and a low noise figure of just 2 dB, the HMC636ST89ETR is well suited to a wide range of applications, including microwave communication systems, radar, test and measurement equipment, and high-speed data systems.
The HMC636ST89ETR\'s specifications make it particularly well suited for mission critical applications, including wireless communication systems, satellite communications, and high speed data links. Its wide-band frequency response is also ideal for applications such as radiometry and phased array radar.
The HMC636ST89ETR uses a two-stage design. The first stage is a single-ended common source stage that provides excellent gain and wide frequency response. The second stage is a balanced, differential amplifier circuit that compensates for any imbalance in the common source stage, resulting in improved linearity and noise reduction. This two-stage design helps to deliver excellent return loss and output power across the frequency range.
The HMC636ST89ETR also features a built-in thermal protection circuit for improved reliability. This protection circuit ensures that the device will shut down if the device temperature exceeds a certain threshold, thus protecting the device from potential damage. Additionally, the HMC636ST89ETR has several built-in features to optimize system performance, including an adjustable bias voltage, an adjustable gate bias, and a matching circuit.
The HMC636ST89ETR provides excellent performance and flexibility for a variety of RF amplifier applications. Its wide frequency bandwidth and low noise figure make it well suited for mission-critical applications such as wireless communication systems and satellite communications. Its wide-band response and adjustable features make it ideal for applications such as radiometry and phased array radar systems. Its built-in thermal protection and adjustable features make it a great choice for high-performance, reliable, and cost-effective designs.
The specific data is subject to PDF, and the above content is for reference
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