Allicdata Part #: | HUF76432P3-ND |
Manufacturer Part#: |
HUF76432P3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 59A TO-220AB |
More Detail: | N-Channel 60V 59A (Tc) 130W (Tc) Through Hole TO-2... |
DataSheet: | HUF76432P3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 130W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1765pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 53nC @ 10V |
Series: | UltraFET™ |
Rds On (Max) @ Id, Vgs: | 17 mOhm @ 59A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 59A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
HUF76432P3 is a highly integrated and performance device that uses proprietary technology to optimize single-mobility-field-effect transistors (FETs). In today’s world, the demand for FETs outstrips their availability due to their lack of power dissipation and power efficiency. As a result, the HUF76432P3 is designed to offer a high-efficiency alternative to other FETs on the market. This article will discuss the application and working principles of the HUF76432P3, and will also explore the advantages and limitations of this device.
Application Field of the HUF76432P3
The HUF76432P3 is a high-performance single-mobility-field-effect transistor (FET) widely used in a wide range of applications such as power conditioning, power switching, motor controllers, audio amplifiers, and more. It has a high current and power handling, low RDSon, and fast switching speed. It is especially suitable for high-efficiency, high-speed applications with low power dissipation. In addition, it is a great choice for AC/DC adapters and automated power supplies.
Working Principle of the HUF76432P3
The HUF76432P3 uses a proprietary methodology to maximize its power efficiency, which is determined by the device\'s on-resistance (RDSon). This methodology involves a complex, self-regulating process involving gate voltage and drain current. In this process, the gate voltage is adjusted to achieve the desired current, which helps to minimize the on-resistance of the device. This helps to reduce power consumption and improve power efficiency, allowing the device to work at higher speeds with increased efficiency.
The HUF76432P3 also utilizes a unique architecture, which is beneficial to the device\'s power efficiency. This architecture is based on a double-gate arrangement consisting of two cells, which allows for more efficient power management. Additionally, this double-gate arrangement produces and maintains an optimized body effect, providing an enhanced ability to control transistor properties. This translates to greater power efficiency and higher switching speeds, resulting in greater system performance.
Advantages of the HUF76432P3
The HUF76432P3 has several advantages over other FETs on the market. First, it has a high current and power handling capacity, making it suitable for high-efficiency, high-speed applications. Additionally, its low RDSon produces higher power efficiency, resulting in a lower overall power dissipation. Additionally, its double-gate arrangement produces an optimized body effect that allows for greater control over transistor properties, resulting in increased system performance.
The HUF76432P3 also has a fast switching speed, making it suitable for AC/DC adapters and automated power supplies. Furthermore, its self-regulated gate voltage control also increases power efficiency and decreases power dissipation, which can help to minimize costs and increase system performance.
Limitations of the HUF76432P3
Despite its many benefits, the HUF76432P3 is not without its limitations. First, it is a highly technical device and requires extensive knowledge and skill to use correctly. Additionally, its design is not ideal for all applications, as its optimized body effect makes it unsuitable for certain applications. Lastly, its cost is relatively high, making it cost-prohibitive for many applications.
Conclusion
The HUF76432P3 is a powerful and versatile single-mobility-field-effect transistor (FET) that can provide exceptional performance in a wide range of applications. It has a high current and power handling capacity, low RDSon, fast switching speed, and self-regulated gate voltage control, offering increased power efficiency and minimized power dissipation. Additionally, its double-gate arrangement produces an optimized body effect for improved transistor control. However, its technical design and high cost make it unsuitable for some applications. Overall, the HUF76432P3 is an ideal choice for many applications where high efficiency and power management are paramount.
The specific data is subject to PDF, and the above content is for reference
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