IDT71V416L15Y

IDT71V416L15Y is a type of high-speed Static Random Access Memory (SRAM) chip, using the advanced 1.5V I2L (Integrated Injection Logic), developed by Integrated Device Technology, Inc.(IDT). It can register up to 4M words, with each word length of 16bits. This static RAM offers fast access times of 15ns with wide operating temperature range and low power consumption, making it suitable for a wide range of applications.

Application Field of IDT71V416L15Y

IDT71V416L15Y is most popularly applied in embedded systems, intelligent instruments, optoelectronic printers, multi-processor communications, and so on. Especially for industrial applications, IDT71V416L15Y can offer advanced features such as fast access times, low power consumption and wide temperature range to ensure reliable and consistent operation.

This SRAM is also popularly used in high-speed data logging applications, such as audio/video data capture and recording, industrial control, and and other high-speed data capture applications. In these applications, the low power consumption and the fast access times allow for a high throughput of data. The wide temperature range further allows for reliable operation in a wide range of temperature conditions.

As there are 4M words in the IDT71V416L15Y, it is also suitable for applications requiring large amounts of data storage. This makes it suitable for multimedia applications, storage devices, web databases and other applications that require large data storage but do not require the full capacity of a DRAM.

Working Principle of IDT71V416L15Y

At the core of IDT71V416L15Y, is the Static RAM cell, which is similar to a Dynamic RAM cell. It consists of two transistors and a static memory capacitor, with the data stored in the form of charges on the capacitor. The data is written and read to/from the RAM cell using write and read operations.

The main difference between SRAM and DRAM is that SRAM does not need to be periodically refreshed as DRAM does. This makes SRAM a simpler and faster memory option for most applications. It also has the advantage of higher speed access than DRAM, with access times as low as 15ns.

The memory cells of the IDT71V416L15Y are connected to address, data and control lines, allowing for easy interfacing with the outside system. The chip also features a number of other features such as auto precharge, page mode and on-chip ECC for reliability and data security. All these features come together to make IDT71V416L15Y a fast and reliable memory option for embedded applications.