Allicdata Part #: | IKW40N65F5AXKSA1-ND |
Manufacturer Part#: |
IKW40N65F5AXKSA1 |
Price: | $ 3.37 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 650V 74A 255W PG-TO247-3 |
More Detail: | IGBT Trench 650V 74A 250W Through Hole PG-TO247-3 |
DataSheet: | IKW40N65F5AXKSA1 Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
240 +: | $ 3.06954 |
Series: | Automotive, AEC-Q101, TrenchStop™ |
Packaging: | Tube |
Lead Free Status / RoHS Status: | -- |
Part Status: | Not For New Designs |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | Trench |
Voltage - Collector Emitter Breakdown (Max): | 650V |
Current - Collector (Ic) (Max): | 74A |
Current - Collector Pulsed (Icm): | 120A |
Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 40A |
Power - Max: | 250W |
Switching Energy: | 350µJ (on), 100µJ (off) |
Input Type: | Standard |
Gate Charge: | 95nC |
Td (on/off) @ 25°C: | 19ns/165ns |
Test Condition: | 400V, 20A, 15 Ohm, 15V |
Reverse Recovery Time (trr): | 73ns |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-247-3 |
Supplier Device Package: | PG-TO247-3 |
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An IKW40N65F5AXKSA1 is a type of transistor that falls into the metal–oxide–semiconductor field-effect transistor (MOSFET) family. It is a single device transistor and is classified as an insulated-gate bipolar transistor (IGBT). The device combines the high input impedance and low on-state resistance of an MOSFET with the high current rating of a bipolar transistor. The IKW40N65F5AXKSA1 is available in both a through-hole mount and surface mount (SMD) package, with the components designed for use in high current, high efficiency switching applications.
The IKW40N65F5AXKSA1 transistor has a slightly different structure from a standard MOSFET. Rather than having a single source and drain contact, it has three terminals: the gate, the source and the drain. The source contact is the highest potential of the three, while the drain contact is the lowest. The gate contact is in-between the source and the drain, and is used to control the current flow between them. This is done using the applied voltage when a current is supplied to the gate. When a positive voltage is applied, the transistor is turned on and conducts current; conversely, when a negative voltage is applied, it is turned off and blocks current flow.
The IKW40N65F5AXKSA1 has a maximum current rating of 40 amps and a maximum voltage rating of 650 volts. It is intended to be used in high current and high voltage applications, such as motor controllers and inverters, as well as in some high power audio applications. Because of the low-on state resistance, the transistor switch can provide very high efficiency voltage switching operations. Additionally, because of its insulation, the device can provide protection from overcurrent, overvoltage and short circuit spark plug conditions.
The IKW40N65F5AXKSA1 has many advantages over other types of transistors. These include its low on-state voltage drop and its high temperature resistance. The low on-state voltage drop allows the IKW40N65F5AXKSA1 to enable high frequency operation with considerably reduced conduction losses. In addition, its high temperature resistance allows it to be used in applications which require continuous switching at temperatures up to 150°C.
The IKW40N65F5AXKSA1 is a versatile device, which can be used in a variety of applications. It is ideal for use in high current, high efficiency switching applications, such as motor controllers and inverters. It can also be used in high power audio applications, providing protection from overcurrent, overvoltage and short circuit spark plug conditions. Additionally, because of its low on-state voltage drop and high temperature resistance, the IKW40N65F5AXKSA1 is also suitable for use in high frequency applications requiring continuous switching at temperatures up to 150°C.
The specific data is subject to PDF, and the above content is for reference
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