IKW50N60TFKSA1 Discrete Semiconductor Products |
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Allicdata Part #: | IKW50N60TFKSA1-ND |
Manufacturer Part#: |
IKW50N60TFKSA1 |
Price: | $ 4.38 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 600V 80A 333W TO247-3 |
More Detail: | IGBT Trench Field Stop 600V 80A 333W Through Hole ... |
DataSheet: | IKW50N60TFKSA1 Datasheet/PDF |
Quantity: | 661 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
1 +: | $ 3.98160 |
10 +: | $ 3.59604 |
100 +: | $ 2.97738 |
500 +: | $ 2.59264 |
1000 +: | $ 2.25810 |
Power - Max: | 333W |
Supplier Device Package: | PG-TO247-3 |
Package / Case: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Reverse Recovery Time (trr): | 143ns |
Test Condition: | 400V, 50A, 7 Ohm, 15V |
Td (on/off) @ 25°C: | 26ns/299ns |
Gate Charge: | 310nC |
Input Type: | Standard |
Switching Energy: | 2.6mJ |
Series: | TrenchStop® |
Vce(on) (Max) @ Vge, Ic: | 2V @ 15V, 50A |
Current - Collector Pulsed (Icm): | 150A |
Current - Collector (Ic) (Max): | 80A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
IGBT Type: | Trench Field Stop |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The IKW50N60TFKSA1 is a 600V typical, 650V maximum (Non repetitive) insulated gate bipolar transistor (IGBT). This particular IGBT belongs to the family of single device IGBTs, having a single emitter and a single collector.
The IKW50N60TFKSA1 has a very low saturation voltage, enabling it to perform well in high voltage DC applications. This, coupled with its high-speed switching capability, makes it ideal for reducing power loss and increasing power efficiency in DC to DC converters. The IKW50N60TFKSA1 is a low voltage IGBT and thus can be used for the drive of AC motor control, solar applications, lighting, motor drives and various other control applications.
The Physics behind the IKW50N60TFKSA1 is very simple and involves three main components -- the gate, the collector and the emitter. The Gate is the control terminal and acts as a switch, turning the transistor on and off and thus controlling the flow of current to the collector and the emitter. The Collector is the terminal that is used to connect the load and the source and thus allows the current to flow from the source to the load. The Emitter is connected to ground, allowing the transistor to flow the negative charge out of the circuit, when the Gate turns the transistor off.
The IKW50N60TFKSA1 has a Gate turn-off voltage (GTO) of 0.98V and a positive voltage gain (hFE) at Ic=40A of 80. It has an operating temperature range of -25°C to +150°C and a package size of 12 x 11mm. The IKW50N60TFKSA1 is also available in an SOT-227 package.
The IKW50N60TFKSA1 has a maximum current rating of 40A and its high speed switching capability enables it to respond at speeds of 4.5ns. It has a low gate-emitter on-state voltage of 1.15V, thus making it highly energy efficient. It also has a maximum operating temperature of 150°C and a maximum collector-emitter voltage of 625V.
Overall, the IKW50N60TFKSA1 is an ideal choice for various DC to DC conversion and motor control applications due to its low voltage, low saturation voltage and high speed switching capability. It is lightweight, easy to install and requires minimal maintenance. And because it is a single device IGBT, it can easily be replaced and replaced in the event of damage.
The specific data is subject to PDF, and the above content is for reference
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