
Allicdata Part #: | IPA50R380CE-ND |
Manufacturer Part#: |
IPA50R380CE |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 500V 9.9A TO220FP |
More Detail: | N-Channel 500V 9.9A (Tc) 29.2W (Tc) Through Hole P... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3.5V @ 260µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | PG-TO-220-FP |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 29.2W (Tc) |
FET Feature: | Super Junction |
Input Capacitance (Ciss) (Max) @ Vds: | 584pF @ 100V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 24.8nC @ 10V |
Series: | CoolMOS™ |
Rds On (Max) @ Id, Vgs: | 380 mOhm @ 3.2A, 13V |
Drive Voltage (Max Rds On, Min Rds On): | 13V |
Current - Continuous Drain (Id) @ 25°C: | 9.9A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IPA50R380CE is a specifically designed N-Channel MOSFET, which is used in applications where high power dissipation is required. This MOSFET has an update rate of up to 2MHz, making it ideal for high-speed switches and high-power drives. The device has a breakdown voltage of -38V and gate-source voltage of 5V. The device is configured in a TO-260 package and has a total gate charge of 13nC. The device is also rated for 30A of maximum drain current. This makes the IPA50R380CE an ideal choice for a wide range of applications, from high-frequency switching to high-power drives.
The operation of this MOSFET is based on the principle of metal-oxide-semiconductor field effect transistors (MOSFETs). The MOSFET works by applying a voltage or current to the gate of the transistor, which in turn controls the current flowing in between the drain and the source terminals. The device is composed of a thin metal oxide layer which acts as a gate dielectric between the gate and the substrate. This thin metal oxide layer allows the device to control the flow of current between the drain and the source terminals. By controlling the gate voltage, the device is able to control the amount of current flowing through the device.
The primary application of the IPA50R380CE is in applications requiring high power dissipation. Such applications may include power regulators and high power drives. In these applications, the device is capable of switching high current loads with precise timing. This can be used in a variety of applications, such as motor control, driver circuits, and solenoid actuators. The device also finds use in RF applications, as it is capable of working at frequencies up to 2MHz.
The device is also widely used in automotive applications, as it is capable of switching high power loads rapidly and with precision. In these applications, the device can be used in engines and automatic transmission systems. In addition, the device can be used in automotive power converters and power MOSFETs. In these applications, the device is capable of providing precise control of the motor performance.
In addition to its primary applications, the IPA50R380CE can also be used for other applications that require precise timing, such as clock and timer circuits. This device can also be used in audio applications, as it is capable of working at frequencies up to 2MHz. This makes it ideal for power amplifiers and high-end audio systems. The device can also be used in medical applications, as it is capable of providing precise control of medical instruments.
In summary, the IPA50R380CE is a specifically designed N-Channel MOSFET to work in applications requiring high power dissipation. This device is capable of switching high current loads with precise timing and has an operating temperature of up to 150°C. This makes the device an ideal choice for a wide range of applications, from high-frequency switching to high-power drives.
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