| Allicdata Part #: | IPB020NE7N3GATMA1TR-ND |
| Manufacturer Part#: |
IPB020NE7N3GATMA1 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 75V 120A TO263-3 |
| More Detail: | N-Channel 75V 120A (Tc) 300W (Tc) Surface Mount D²... |
| DataSheet: | IPB020NE7N3GATMA1 Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 3.8V @ 273µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | D²PAK (TO-263AB) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 300W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 14400pF @ 37.5V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 206nC @ 10V |
| Series: | OptiMOS™ |
| Rds On (Max) @ Id, Vgs: | 2 mOhm @ 100A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
| Drain to Source Voltage (Vdss): | 75V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The IPB020NE7N3GATMA1 is a field-effect transistor (FET) which is a type of transistor that controls the flow of current using an electric field. It is classified as a single transistor, meaning that it is composed of a single semiconductor component with three terminals. This component can be used to control the current flow within a circuit, as well as to amplify or switch the power of the signal.
IPB020NE7N3GATMA1 Application Field
The IPB020NE7N3GATMA1 transistor is used in a wide variety of applications. Its capabilities as a low power consumption switch, power amplifier, and signal switcher make it ideal for a multitude of uses in a variety of industries. It is commonly used in telecom and networking systems to easily manage the connection between components. The flexibility and low power consumption of this transistor also make it suitable for use in small electronic devices where power consumption is a factor. Its ability to meter and switch power within a circuit makes it ideal for use in computerized devices, including industrial control systems, machine vision, and robotic arms.
The IPB020NE7N3GATMA1 is also used in consumer electronics. It is used in consumer appliances such as televisions and digital audio systems to control the flow of current and the power of signal. In addition, the transistor is also used in high-end electronic devices such as wireless gaming headsets, wireless speakers, and Bluetooth systems.
IPB020NE7N3GATMA1 Working Principle
The IPB020NE7N3GATMA1 is a single transistor with three terminals, known as the source, drain, and gate. A voltage is applied to the gate, which controls the current flowing through the source and drain. The voltage applied to the gate activates the electric field and allows the current to flow between the source and drain. The current flowing through the source and drain is directly proportional to the voltage applied to the gate.
When using the IPB020NE7N3GATMA1, it is important to ensure the correct voltage is applied to the gate in order to achieve the desired current flow. The voltage that is applied should be between 4.5V and 20V, depending on the application. If the voltage is too low or too high, then the current flowing through the source and drain will not be optimal.
This transistor can be used for several applications, such as current amplification, signal switching, and regulating the power within a circuit. By controlling the current flow and switching, the IPB020NE7N3GATMA1 enables electronic devices to function properly.
Conclusion
In conclusion, the IPB020NE7N3GATMA1 is a single transistor with three terminals. It is commonly used in telecom and networking systems, small electronic devices, and consumer electronics. Its ability to meter and switch power within a circuit makes it ideal for various applications. When using the IPB020NE7N3GATMA1, it is important to ensure that the correct voltage is applied to the gate to achieve the desired current flow. This will allow the transistor to perform its intended job properly and efficiently.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| IPB035N08N3GATMA1 | Infineon Tec... | 1.31 $ | 2000 | MOSFET N-CH 80V 100A TO26... |
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| IPB04N03LB | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 80A D2PAK... |
| IPB05CN10N G | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 100V 100A TO2... |
| IPB06N03LB G | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 50A D2PAK... |
| IPB052N04NGATMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 40V 70A TO263... |
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| IPB070N06L G | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 60V 80A TO-26... |
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| IPB03N03LA G | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 25V 80A TO-26... |
| IPB032N10N5ATMA1 | Infineon Tec... | -- | 1000 | MOSFET N-CH 100V 166A TO2... |
| IPB081N06L3GATMA1 | Infineon Tec... | 0.54 $ | 2000 | MOSFET N-CH 60V 50A TO263... |
| IPB027N10N5ATMA1 | Infineon Tec... | -- | 1000 | MOSFET N-CH 100V 120A D2P... |
| IPB065N06L G | Infineon Tec... | -- | 1000 | MOSFET N-CH 60V 80A D2PAK... |
| IPB041N04NGATMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 40V 80A TO263... |
| IPB021N06N3GATMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 60V 120A TO26... |
| IPB039N04LGATMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 40V 80A TO263... |
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| IPB097N08N3 G | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 80V 70A TO263... |
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| IPB020NE7N3GATMA1 | Infineon Tec... | -- | 1000 | MOSFET N-CH 75V 120A TO26... |
| IPB044N15N5ATMA1 | Infineon Tec... | -- | 1000 | MOSFET N-CH 150V 174A TO2... |
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IPB020NE7N3GATMA1 Datasheet/PDF