IPB80N03S4L02ATMA1

Vgs(th) (Max) @ Id:	2.2V @ 90µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	PG-TO263-3-2
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	136W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	9750pF @ 25V
Vgs (Max):	±16V
Gate Charge (Qg) (Max) @ Vgs:	140nC @ 10V
Series:	OptiMOS™
Rds On (Max) @ Id, Vgs:	2.4 mOhm @ 80A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	80A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The IPB80N03S4L02ATMA1, commonly known as the MOSFET (metal oxide semiconductor field effect transistor), is a type of field effect transistor that use a gate structure to control either the source or drain portions of the transistor\'s channel. It is a three-terminal device consisting of a source, gate, and drain, where a voltage applied to the gate controls the output current that flows between the source and drain.MOSFETs differ from traditional bipolar transistors in that they are voltage-controlled instead of current-controlled. This allows the MOSFET to achieve far higher levels of efficiency, with power losses of no more than a few milliwatts. In addition, the MOSFET\'s threshold voltage can be adjusted to different levels without any changes to the reference voltage and current.The IPB80N03S4L02ATMA1 is a type of power MOSFET that is mainly used in high voltage, high current applications. It is capable of switching up to 800 volts and can handle up to 20 amps of current. It is designed to be used in applications that require fast switching speeds and low losses in switching and conduction. The device can also be used in applications that require high frequency switching, such as motor control, audio amplifiers, and switch-mode power supplies.The IPB80N03S4L02ATMA1 is a single N-channel enhancement-type MOSFET. The device consists of a single gate oxide layer and a single channel which is formed by a P-channel MOSFET in the same package. A drain-source current flows from the drain to the source due to the electric field dependent on the gate voltage when there is a voltage difference between the drain and the source.The main working principle of the IPB80N03S4L02ATMA1 is the MOS capacitor effect. By applying a positive voltages on the gate, the electron charge density increases and forms a potential barrier between the gate and the substrate. This potential barrier reduces the flow of current between the source and the drain. By increasing the voltage at the gate, the potential barrier can be increased to the point where no current can flow.In terms of application fields, the IPB80N03S4L02ATMA1 can be used in various high power switching circuits and DC-DC converters. It can also be used in high power audio amplifiers, motor controls, and various other specialized power circuits. Additionally, the device is suitable for use in applications that require fast switching speeds and low losses in switching and conduction.The IPB80N03S4L02ATMA1 is a versatile MOSFET and is suitable for a variety of applications. It is easy to use and can handle high voltages and large currents, making it an ideal choice for power applications. It is also capable of fast switching speeds with low losses, making it an ideal choice for situations that require fast response times. With its versatile design, the IPB80N03S4L02ATMA1 is a popular choice for those looking for a reliable and efficient MOSFET.

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